Transparent Conductive Film Sputtering Process
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Solution Overview
Problem
Current methods for producing transparent conductive films with low resistance and short crystallization time are hindered by the need for silicon oxide underlying layers, which degrade under light and affect visibility, and long vacuum evacuation times, reducing productivity.
Innovation Solution
A method using a roll-to-roll sputtering apparatus with three deposition chambers to form an underlying conductive layer and a main conductive layer with adjusted power and tin oxide content, releasing carbon and nitrogen gases during underlying layer deposition to reduce their partial pressure and facilitate short-time crystallization without silicon oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If silicon oxide underlying layer is used to achieve short-time crystallization, then crystallization time is reduced, but visibility is degraded due to light degradation
Solution Approach 1:
The patent removes the silicon oxide underlying layer from the structure entirely. Instead of using silicon oxide as an underlying layer to promote crystallization, the invention deposits the transparent electrode layer directly on the transparent film substrate, thereby eliminating the visibility degradation caused by silicon oxide light degradation while achieving short-time crystallization through direct deposition conditions
Solution Approach 2:
The patent changes the deposition parameters by controlling the oxygen partial pressure and deposition conditions to enable short-time crystallization without requiring a silicon oxide underlying layer. By optimizing the deposition oxygen partial pressure and subsequent heating conditions, the transparent electrode layer achieves rapid crystallization while maintaining visibility
2Manufacturing precision
If long vacuum evacuation is performed to clear outgases, then deposition quality is improved, but productivity is reduced
Solution Approach 1:
The patent performs preliminary heating of the transparent film substrate before deposition to release outgases (particularly carbon and nitrogen gases) in advance. This preliminary action reduces the outgas load during actual deposition, allowing for shorter vacuum evacuation times while maintaining high deposition quality
Solution Approach 2:
The patent implements a continuous process where the transparent film substrate is heated and outgases are released continuously during the deposition process itself, rather than requiring separate long evacuation steps. This continuous removal of outgases during deposition maintains film quality while improving productivity
3Speed
If high power density is used for high rate deposition, then deposition speed is increased, but substrate film damage increases and outgas generation increases
Solution Approach 1:
The patent uses periodic or pulsed sputtering deposition rather than continuous high power density deposition. By applying power in pulses or cycles, the process achieves high average deposition rates while allowing the substrate to recover between pulses, reducing cumulative damage and outgas generation
Solution Approach 2:
The patent optimizes the deposition parameters by controlling the oxygen partial pressure and power density to achieve high deposition rates without excessive substrate damage. By carefully balancing the deposition conditions, the process maintains high speed while minimizing harmful outgas generation from the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of transparent conductive films with low resistance and short crystallization time without degrading visibility, improving productivity by reducing the need for long vacuum evacuation and avoiding silicon oxide degradation.
Implementation Method 1
a transparent electrode layer is formed by sputtering deposition
Implementation Method 2
The amorphous transparent electrode layer is crystallized when heated under an oxygen atmosphere
Implementation Method 3
a cleaning (bombardment) of the surface of a film substrate is performed before deposition of a transparent electrode layer by generating plasma in the presence of an inert gas such as an argon gas
Data Source
AI summary
For use in a method for producing a transparent conductive film having an ITO transparent electrode layer, a roll-to-roll sputtering apparatus includes at least three deposition chambers adjacent to a deposition roll. While a transparent film substrate is conveyed on the deposition roll, a base conductive layer is formed by sputtering deposition in one or more deposition chambers, and a main conductive layer is formed thereon by successive sputtering deposition in two or more film deposition chambers. The applied power in the deposition chambers where the underlying conductive layer is formed is 5% to 20% of the total of the applied power in each the deposition chamber where the underlying or main conductive layer is formed. In formation of the main conductive layer, the applied power in the deposition chamber where the ITO thin film is first deposited is less than the applied power in the next deposition chamber.