Transparent Electrode Substrate With Amorphous Oxide Layers for Low Resistance
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Solution Overview
Problem
Conventional methods for forming transparent electrodes on polymeric film base materials face challenges in achieving low sheet resistance due to diffusion of oligomeric components into the oxide layers and surface unevenness, which affects crystallinity and electrical performance.
Innovation Solution
A method involving the sequential formation of amorphous transparent foundation and conductive oxide layers on a polymeric film base material using a sputtering method, with specific voltage and pressure conditions, followed by annealing to increase crystallinity and grain size, resulting in a substrate with a transparent electrode having low sheet resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma treatment or bombardment treatment is used to modify the film base material surface, then surface flatness is improved, but oligomeric components diffuse into the oxide layers, worsening electrical performance
Solution Approach 1:
The patent applies preliminary plasma treatment to the film base material surface before oxide layer formation to flatten the surface and remove organic components. This preliminary action prevents subsequent diffusion of oligomeric components into the oxide layers during annealing, thereby resolving the contradiction between achieving surface flatness and maintaining electrical performance
Solution Approach 2:
The patent introduces an intermediary amorphous transparent foundation oxide layer between the film base material and the conductive oxide layer. This foundation layer acts as a barrier that prevents diffusion of oligomeric components from the polymeric substrate into the conductive oxide layer, while still allowing the surface flatness benefits to be realized
2Ease of manufacture
If conventional foundation layer formation or bombardment treatment is used, then surface modification is achieved, but fine unevenness remains, worsening crystallinity of transparent electrodes
Solution Approach 1:
The patent applies preliminary plasma treatment followed by formation of an amorphous foundation oxide layer before depositing the conductive oxide layer. This preliminary preparation creates a perfectly flat amorphous surface that eliminates fine unevenness, thereby enabling high crystallinity in the subsequent conductive oxide layer during annealing
Solution Approach 2:
The patent changes the physical state parameter of the foundation oxide layer to amorphous, which inherently provides a flat surface without the fine unevenness associated with crystalline structures. This parameter change in the foundation layer's structural state enables subsequent layers to achieve high crystallinity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively decreases sheet resistance and enhances the crystallinity of the transparent oxide layer, leading to improved electrical performance and uniformity, suitable for applications in display devices and smart windows.
Implementation Method 1
forming a transparent oxide layer on a film base material; the transparent oxide layer including an amorphous transparent foundation oxide layer and an amorphous transparent conductive oxide layer formed sequentially on the film base material through a sputtering method
Implementation Method 2
followed by annealing to increase crystallinity and grain size, resulting in a substrate with a transparent electrode having low sheet resistance
Data Source
AI summary
A transparent electrode-equipped substrate includes, on a film base material having a transparent film substrate, a non-crystalline transparent foundation oxide layer and a non-crystalline transparent conductive oxide layer. The transparent electrode-equipped substrate is capable of achieving low resistivity by having the transparent oxide layers being formed sequentially from the film base material side through sputtering such that the absolute value of a discharge voltage (VU) of a direct-current (DC) power supply when forming the transparent foundation oxide layer is 255-280 V, the ratio (VU/VC) between the discharge voltage (VU) of the DC power supply when forming the transparent foundation oxide layer and the discharge voltage VC of the DC power supply when forming the transparent conductive oxide layer is 0.86-0.98.