Transparent Electrode Layout for Vertical LED Light Panels
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Solution Overview
Problem
Metallic connecting electrodes in vertical light-emitting diode display panels are opaque, which negatively impacts the light-emitting efficiency due to their opaque nature.
Innovation Solution
The use of transparent electrodes connected to the P-type semiconductor layers of light-emitting diode elements, allowing for improved light transmission and reduced resistance, along with a common electrode configuration that ensures higher potential for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal connecting electrodes are used to electrically connect vertical light-emitting diodes to the driving backplane, then good electrical connectivity and ohmic contact are achieved, but light-emitting efficiency deteriorates due to the opacity of metals
Solution Approach 1:
The patent changes the material parameter of the connecting electrode from opaque metal to transparent conductive material (such as ITO - indium tin oxide). This parameter change maintains the electrical conductivity function while eliminating the light-blocking property, thereby resolving the contradiction between electrical connectivity and light-emitting efficiency
Solution Approach 2:
The patent uses composite material structures where transparent conductive oxides (like ITO) replace traditional metal electrodes. This composite approach combines the electrical conductivity of metals with the optical transparency of ceramic oxides, achieving both good electrical connectivity and high light-emitting efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of transparent electrodes over P-type semiconductor layers enhances light-emitting efficiency by minimizing light loss and improving current resistance, while the common electrode configuration ensures effective electrical connectivity and reduced impact from potential differences.
Implementation Method 1
Each of the light-emitting diode elements has a P-type semiconductor layer, an N-type semiconductor layer, a light-emitting layer disposed between the P-type semiconductor layer and the N-type semiconductor layer
Implementation Method 2
The at least one transparent electrode is disposed on P-type semiconductor layers of the light emitting diode elements. The at least one transparent electrode is electrically connected to the P-type semiconductor layers of the light-emitting diode elements
Implementation Method 3
The at least one common electrode has at least one common potential, and the at least one common potential is higher than the driving potentials
Implementation Method 4
Based on the consideration of forming an ohmic contact, the material of the connecting electrodes is usually made of metal
Data Source
AI summary
A light emitting panel includes a driving backplane, light-emitting diode elements and at least one transparent electrode. The driving backplane has pads and at least one common electrode. Each of the light-emitting diode elements has a P-type semiconductor layer, an N-type semiconductor layer, a light-emitting layer disposed between the P-type semiconductor layer and the N-type semiconductor layer, and a bonding electrode electrically connected to the N-type semiconductor layer. Bonding electrodes of the light emitting diode elements are electrically connected to the pads of the driving backplane, respectively. The bonding electrode, the N-type semiconductor layer, the light emitting layer and the P-type semiconductor layer of each of the light emitting diode elements are sequentially disposed on a corresponding one of the pads along a direction away from the driving backplane. The at least one transparent electrode is disposed on P-type semiconductor layers of the light emitting diode elements. The at least one transparent electrode is electrically connected to the P-type semiconductor layers of the light-emitting diode elements and the at least one common electrode of the driving backplane.