Transparent Electrode Pattern for Plasma Etching Uniformity
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Solution Overview
Problem
Current substrate treatment processes using plasma etching face challenges in achieving uniform film formation and efficient etching on substrates, particularly in semiconductor manufacturing, where existing technologies struggle to combine effective plasma generation with fast heating in a single chamber.
Innovation Solution
A substrate treating apparatus is designed with a chamber that includes a support unit, a plasma generation unit with a top and bottom electrode member, and a high frequency power source. The top electrode member features a transparent electrode pattern and a heating unit for rapid substrate heating, allowing for simultaneous plasma treatment and improved etching uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If plasma generation is performed using electromagnetic field in a chamber, then plasma treatment can be achieved, but fast heating capability is insufficient
Solution Approach 1:
The patent combines plasma generation and fast heating functions into a single chamber by integrating the heating unit with the plasma generation unit. The heating unit includes transparent electrodes that can generate plasma while simultaneously heating the substrate through resistive heating or plasma-induced heating, eliminating the need for separate processing chambers and enabling both functions to occur concurrently.
Solution Approach 2:
The plasma generation unit is designed to perform multiple functions: generating plasma for surface treatment and heating the substrate for fast thermal processing. The transparent electrodes serve dual purposes of electrical conduction for plasma generation and heat generation for substrate heating, making the system multi-functional and improving both heating speed and plasma treatment efficiency.
2Manufacturing precision
If conventional plasma etching is used, then plasma treatment can be performed, but etching uniformity and film formation uniformity are insufficient
Solution Approach 1:
The patent employs multiple transparent electrodes arranged in specific patterns (e.g., interdigitated or concentric rings) to create localized plasma generation zones. This allows different regions of the substrate to receive tailored plasma treatment, improving etching uniformity across the entire substrate surface while maintaining a relatively simple single-chamber configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enhances etching efficiency and film formation uniformity by controlling plasma generation and applying high-frequency power to the electrode patterns, which improves the substrate treatment process, particularly in semiconductor manufacturing.
Implementation Method 1
a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space
Implementation Method 2
a high frequency power source for applying a high frequency power to the top electrode member
Implementation Method 3
a heating unit positioned above the top electrode member and irradiating an energy through the top electrode member to the substrate to heat the substrate
Data Source
AI summary
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member and a top electrode member disposed opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode pattern on the first plate and having a pattern.