Transparent Electrode for Rapid Substrate Heating
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Solution Overview
Problem
Conventional substrate heating methods using heaters are slow and inefficient in uniformly heating substrates during semiconductor manufacturing processes, particularly in plasma etching, which hampers productivity and uniformity in film formation.
Innovation Solution
A substrate treating apparatus that integrates a plasma generation unit with a top electrode member made of transparent materials and a high-speed heating source, allowing for rapid and uniform heating of substrates by passing energy through a quartz material, while maintaining etching resistance with a protective layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional heater is used to heat the substrate, then the substrate temperature can be increased, but the heating and cooling process takes a long time and uniform heating of the entire substrate is difficult
Solution Approach 1:
The patent replaces the conventional mechanical heater with a high-speed heat source (infrared lamp, flash lamp, laser, or microwave) that heats the substrate through electromagnetic radiation or plasma generation. This substitution enables rapid heating and cooling, reducing the time required for temperature changes while achieving uniform substrate temperature distribution.
2Productivity
If a high-speed heat source is used to anneal the substrate, then the heating time is shortened and productivity is improved, but the apparatus complexity increases
Solution Approach 1:
The patent integrates the high-speed heat source into the existing plasma processing chamber, allowing the same apparatus to perform both plasma treatment and rapid thermal annealing functions. This multi-functionality approach increases productivity without requiring separate dedicated equipment, thereby limiting the increase in overall apparatus complexity.
3Speed
If a transparent electrode is used in the top electrode member, then high-speed heating can be achieved by passing energy through the electrode, but the electrode material selection is limited
Solution Approach 1:
The patent employs transparent conductive materials such as ITO (indium tin oxide), MnSnO, CNT (carbon nanotubes), ZnO, IZO, ATO, SnO2, IrO2, RuO2, graphene, metal nanowires, and conductive polymers for the electrode layer. These composite or specialized materials provide both electrical conductivity and transparency, enabling high-speed heating while maintaining electrode functionality.
4Speed
If the top electrode member is made of transparent material for high-speed heating, then rapid energy transmission is achieved, but etching resistance may be compromised
Solution Approach 1:
The patent uses composite structures for the top electrode member, combining transparent conductive materials (ITO, MnSnO, CNT, ZnO, IZO, ATO, SnO2, IrO2, RuO2, graphene, metal nanowires, conductive polymers) with protective coatings or multi-layer configurations that provide etching resistance while maintaining transparency and conductivity for high-speed heating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables faster substrate heating and improved plasma treatment uniformity, enhancing etching processes and film formation quality, thus increasing semiconductor chip productivity.
Implementation Method 1
a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space
Implementation Method 2
in order to form the plasma, an electromagnetic field is formed in an inner space of a chamber, and the electromagnetic field generates the plasma from a process gas provided in the chamber
Implementation Method 3
a method of annealing the substrate using various high-speed heat sources (e.g., infrared lamps, flashes, lasers, microwaves, etc.) at a top of the chamber
Implementation Method 4
a method of annealing the substrate using various high-speed heat sources (e.g., infrared lamps, flashes, lasers, microwaves, etc.)
Data Source
AI summary
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.