Transparent Electrode Thin Film Transistor Panel Opening Ratio
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Solution Overview
Problem
Conventional thin film transistor panels have a low opening ratio due to the use of light-blocking electroconductive materials for gate and source/drain electrodes, which do not contribute to the transparency of the pixel area.
Innovation Solution
The thin film transistor panel features transparent gate, drain, and source electrodes made of metal oxides with impurities, integrated with transparent pixel electrodes that cover at least part of the gate electrode, allowing for increased transparency and a larger opening ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If light blocking electroconductive material is used for gate electrode and source/drain electrodes, then electrical conductivity is ensured, but opening ratio decreases
Solution Approach 1:
The patent changes the material parameter of the gate electrode from light-blocking electroconductive material to transparent electroconductive material, fundamentally altering both the optical and electrical properties to simultaneously improve opening ratio and maintain conductivity
Solution Approach 2:
The patent employs composite material structures where transparent electroconductive materials are combined with semiconductor layers and insulating layers to create a multifunctional gate electrode that provides both electrical conduction and optical transparency
2Area of stationary object
If transparent material is used for gate electrode and pixel electrode, then opening ratio increases, but manufacturing process complexity increases
Solution Approach 1:
The patent merges the gate electrode and pixel electrode into a unified transparent structure, where the same transparent electroconductive material layer serves dual functions, thereby reducing the number of separate manufacturing steps and simplifying the overall process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the opening ratio by ensuring that the thin film transistors are fully covered by transparent pixel electrodes, preventing light leakage and maintaining low resistance values, thus improving the panel's transparency and efficiency.
Implementation Method 1
transparent gate electrode (11) connected to one of the scanning lines (2), a transparent drain electrode (16) connected to one of the data lines (3), a transparent source electrode (15) and a transparent semiconductor thin film (13)
Data Source
AI summary
A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.