Transparent Electrode Substrate with Dielectric Underlayer

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Solution Overview

Problem

Substrates with transparent electrodes face challenges in maintaining electrical properties when stored at normal temperatures, as crystallization can lead to internal stress and peeling or deformation, contradicting the need for accelerated crystallization during heat treatment.

Innovation Solution

A substrate with a dielectric and crystalline underlayer, primarily composed of indium oxide, zinc oxide, or yttrium oxide, is formed between the film substrate and the transparent electrode thin-film, controlling crystallinity and suppressing crystallization at normal temperatures while accelerating it during heat treatment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If heat treatment is applied to accelerate crystallization of the transparent electrode thin-film, then resistance is reduced, but crystallization under normal-temperature environment causes internal stress and peeling

Engineering Contradiction:
Improveelectrical property stabilityVSAvoidcrystalline structure stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

A buffer layer is introduced between the transparent electrode thin-film and the film substrate to act as an intermediary. This buffer layer suppresses crystallization of the transparent electrode thin-film under normal-temperature storage conditions, preventing internal stress and peeling. During heat treatment, the buffer layer allows controlled crystallization to reduce resistance while maintaining film integrity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the physical and chemical parameters of the interface between the transparent electrode thin-film and the substrate by introducing a buffer layer with specific properties (amorphous or crystalline structure, specific material composition). This parameter change enables different crystallization behaviors under different temperature conditions - suppressing crystallization at room temperature while allowing it during heat treatment.

Inventive Principle:
Principle #35Parameter changes

2Stability of the object's composition

If the transparent electrode thin-film is made amorphous to suppress normal-temperature crystallization, then peeling is prevented, but resistance reduction through crystallization is hindered

Engineering Contradiction:
Improvefilm structure stabilityVSAvoidelectrical property
Core Design Contradiction:
Stability of the object's compositionVSReliability

Solution Approach 1:

The buffer layer is formed in advance before depositing the transparent electrode thin-film. This preliminary action creates a controlled interface that pre-determines the crystallization behavior of the subsequent thin-film, suppressing normal-temperature crystallization while enabling heat treatment-induced crystallization.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The buffer layer serves as a mediator that controls the interaction between the transparent electrode thin-film and the film substrate. It modulates the crystallization process by providing a specific interface structure that prevents unwanted crystallization at room temperature while facilitating controlled crystallization during heat treatment.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach stabilizes the electrical properties of the transparent electrode, preventing peeling or deformation and achieving low resistance and high transparency, suitable for high-performance products.

Implementation Method 1

the underlayer is dielectric and crystalline... suppression of crystallization under a normal-temperature environment

Methodology Applied
Scientific EffectCrystallization suppression: Crystallisation

Implementation Method 2

techniques for reducing the resistance of a transparent electrode thin-film by heat-treating the transparent electrode thin-film to accelerate crystallization

Methodology Applied
Scientific EffectHeat treatment: Heat Treatment

Implementation Method 3

heat-treating the transparent electrode thin-film to accelerate crystallization

Methodology Applied
Scientific EffectCrystallization acceleration: Crystallisation

Data Source

PatentUS10777709B2Substrate with transparent electrode and method for producing same
Publication Date: 2020.09.15 KANEKA CORP
  • US10777709B2 patent drawing
  • US10777709B2 patent drawing
  • US10777709B2 patent drawing

AI summary

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.