Partially Transparent Gate Insulator for TFT Light Stability
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Solution Overview
Problem
Thin film transistors with oxide active layers are sensitive to light, leading to performance issues such as residual images and line defects, and the use of metal shielding layers generates parasitic capacitance, affecting response speed and performance.
Innovation Solution
A partially transparent insulating layer is added between the base substrate and the gate electrode, improving light stability and eliminating parasitic capacitance, while allowing for a self-aligned double gate structure with reduced manufacturing complexity and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal shielding layer is added to protect the oxide active layer from light, then light stability is improved, but parasitic capacitance is generated which affects response speed and performance
Solution Approach 1:
The patent introduces a partially transparent layer as an intermediary component between the base substrate and the gate electrode. This layer provides light shielding protection to the oxide active layer while being transparent enough to prevent parasitic capacitance formation, thus mediating between the conflicting requirements of light stability and electrical performance
Solution Approach 2:
The patent changes the transparency parameter of the shielding layer from completely opaque (metal) to partially transparent. By adjusting the light transmittance parameter of the shielding layer, the patent achieves both light protection and elimination of parasitic capacitance effects
2Reliability
If the partially transparent layer is made larger to cover the active layer completely, then light protection is improved, but device area and complexity increase
Solution Approach 1:
The patent merges the partially transparent layer with the gate electrode structure, making them form an integrated component. The gate electrode serves dual functions as both the electrical control element and the light shielding layer, eliminating the need for separate shielding structures and reducing device complexity
Solution Approach 2:
The gate electrode is given multi-functionality by serving both as the electrical control element and as the light shielding layer. This universal design eliminates redundant components and simplifies the overall device structure while maintaining effective light protection
Data Source
AI summary
The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display panel. The thin film transistor includes a base substrate; a partially transparent layer on one side of the base substrate; a first gate electrode on one side of the partially transparent layer away from the base substrate; a second gate insulation layer on one side of the first gate electrode away from the base substrate; and an active layer on one side of the second gate insulation layer away from the base substrate. An orthographic projection of the partially transparent layer to the base substrate covers an orthographic projection of the active layer to the base substrate.