Transparent Gate Wiring Stack for High-Aperture Semiconductor Displays
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with light-transmitting semiconductor layers face challenges in achieving high aperture ratio and low power consumption due to high wiring resistance caused by using light-transmitting conductive materials for gate and source wirings.
Innovation Solution
The semiconductor device employs a layered structure for gate and source wirings, where a light-transmitting conductive film is stacked with a light-shielding conductive film, allowing for reduced wiring resistance and power consumption while maintaining high aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If light-transmitting conductive material is used for gate and source wirings, then aperture ratio is improved, but wiring resistance increases
Solution Approach 1:
The patent applies composite materials by stacking a light-transmitting conductive film (such as ITO, IZO, or ITZO) with a light-shielding conductive film (such as Al, Mo, Ti, W, Nd, Cu, or Ag) to form gate and source wirings. This composite structure combines the high light transmittance of the first material with the high conductivity of the second material, thereby achieving both high aperture ratio and low wiring resistance simultaneously.
2Reliability
If light-shielding conductive material is used for gate and source electrodes, then wiring resistance decreases, but aperture ratio decreases and power consumption increases
Solution Approach 1:
The patent uses composite materials by forming a stacked structure of light-transmitting conductive film and light-shielding conductive film. The light-transmitting film is positioned at the gate electrode and source electrode regions where light transmission is critical, while the light-shielding film provides the necessary conductivity. This composite approach allows the wiring to have low resistance without blocking light in the pixel aperture regions.
Solution Approach 2:
The patent applies local quality by having different optical properties at different locations of the wiring structure. The light-transmitting conductive film is used at the electrode regions (gate and source) where light transmission is most important for aperture ratio, while the light-shielding conductive film provides conductivity without necessarily blocking light in all regions. This localized optimization allows simultaneous achievement of low resistance and high aperture ratio.
Data Source
AI summary
An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.