Transparent Horizontal Gradient Freeze Furnace for Growth Rate Control

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing methods for producing small quantities of crystallized Indium Antimonide (InSb) mixed with Nickel Antimonide (NiSb) are not economically viable and lack the ability to actively regulate the growth rate, leading to the depletion of existing inventories and the cessation of commercial production.

Innovation Solution

A horizontal gradient freeze (HGF) furnace with a transparent observation section and controlled temperature gradients, combined with optical and machine vision systems, allows for precise regulation of the growth rate and monitoring of the crystallization process to produce high-quality InSb:NiSb ingots.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If vertical growth methods (CZ, VB, THM) are used to actively regulate growth rate by monitoring boule weight, then growth rate control is improved, but economic viability deteriorates for small quantities of material

Engineering Contradiction:
Improvegrowth rate controlVSAvoideconomic viability
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent inverts the traditional vertical growth approach by using a horizontal growth configuration where the boule is stationary and the temperature gradient is applied horizontally. This allows growth rate control through temperature gradient regulation rather than mechanical pulling, making the process more suitable for small batch production while maintaining precision control.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the control parameter from mechanical (boule weight monitoring and pulling speed) to thermal (temperature gradient magnitude and distribution). By regulating the temperature gradient parameters in the horizontal direction, the growth rate is controlled without requiring mechanical movement, thereby improving economic viability for small quantities while maintaining manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If traditional methods (CZ, VB, HB, THM) are used to produce InSb:NiSb in large quantities, then productivity is improved, but economic viability deteriorates due to diminished demand and depleted inventories

Engineering Contradiction:
Improveproduction quantityVSAvoideconomic viability
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent applies partial action by designing a growth system optimized for small batch production rather than large-scale continuous production. The horizontal gradient freeze method with controlled temperature gradients enables production of small quantities of high-quality InSb:NiSb material, matching the current market demand for specialized applications like magneto-resistor devices where inventory depletion has occurred.

Inventive Principle:
Principle #16Partial or excessive action

3Manufacturing precision

If horizontal gradient freeze method is used with transparent observation section and optical monitoring, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvecrystallization controlVSAvoidsystem configuration
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces an intermediary observation section with transparent or translucent material that allows optical monitoring of the crystallization process without interfering with the thermal field or requiring complex mechanical adjustment systems. This intermediary enables precise crystallization control through visual observation while minimizing the addition of complex components to the system.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the production of InSb:NiSb ingots with controlled needle density and length, ensuring high yield and device-grade quality, suitable for specialized applications like magneto-resistor devices, while being economically viable for small-scale production.

Implementation Method 1

a plurality of heating elements within the interior of the HGF furnace, the heating elements being configured to control both an average temperature and a temperature gradient in the horizontal growth direction when energized by the controller

Methodology Applied
Scientific EffectTemperature gradient: Temperature Gradient

Implementation Method 2

as the precursor material crystallizes in a crystal growing region of a crystal growth boat that is located within the interior of the HGF furnace

Methodology Applied
Scientific EffectCrystallization: Crystallisation

Data Source

PatentUS20250283245A1Transparent horizontal gradient freeze apparatus with regulated growth rate
Publication Date: 2025.09.11 BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC
  • US20250283245A1 patent drawing
  • US20250283245A1 patent drawing
  • US20250283245A1 patent drawing

AI summary

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid/liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid/liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm/hr for substantially single crystal ingots, and between 0.5 and 1.5 cm/hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.