Transparent Oxide Transistor Layout for High-Aperture Displays
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Solution Overview
Problem
Existing display devices face challenges in achieving high-definition, low power consumption, high visibility, and high reliability, particularly in liquid crystal display devices, with limited aperture ratios and inefficient light transmission.
Innovation Solution
The display device incorporates a transistor with a channel width of 30 μm to 1000 μm, multiple semiconductor layers containing metal oxides like indium or zinc, and conductive layers that transmit visible light, enhancing aperture ratio and light extraction efficiency while using a field-sequential driving method with light-scattering liquid crystal elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the channel width of the transistor is increased to improve drive capability and definition, then the aperture ratio and light transmission are improved, but the transistor occupies more area and power consumption increases
Solution Approach 1:
The patent applies parameter changes by optimizing the channel width to a specific range (30 μm to 1000 μm) rather than simply increasing it. This optimized parameter range achieves sufficient light transmission and aperture ratio while controlling power consumption and transistor area, resolving the contradiction between light transmission and power consumption.
Solution Approach 2:
The patent uses composite materials by incorporating metal oxide semiconductors (containing indium or zinc) in the transistor channel region. This composite semiconductor material enables high-mobility charge transport, allowing the transistor to achieve high drive capability with smaller channel dimensions, thus improving light transmission without proportionally increasing power consumption.
2Illumination intensity
If multiple semiconductor layers with metal oxide are used to improve transistor performance and aperture ratio, then light transmission and definition are enhanced, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor layer into distinct functional regions: channel formation region, first region, and second region. Each region has specific characteristics (the channel formation region contains metal oxide for high mobility, while other regions may have different compositions for source/drain functionality). This segmentation enables optimized light transmission and transistor performance while maintaining manageable manufacturing complexity through standardized region definitions.
3Illumination intensity
If the channel formation region is optimized for light transmission and aperture ratio, then visibility and definition are improved, but transistor drive capability and reliability may be compromised
Solution Approach 1:
The patent uses composite materials by forming the channel formation region with metal oxide semiconductors (containing indium or zinc) that combine high charge carrier mobility with good optical transmission properties. This composite semiconductor structure simultaneously improves visibility/aperture ratio and maintains transistor reliability through the high mobility enabled by the metal oxide material.
Solution Approach 2:
The patent applies local quality by concentrating the metal oxide material specifically in the channel formation region while allowing other regions (first and second regions) to have different compositions optimized for their specific functions (source/drain contacts). This localized optimization ensures that light transmission and visibility are improved in the critical channel area without compromising the reliability of the overall transistor structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a high-definition display device with low power consumption, high visibility, and improved reliability, along with a high aperture ratio, enabling efficient light transmission and wide temperature range operation.
Implementation Method 1
each of the plurality of semiconductor layers includes a channel formation region, a first region, and a second region, the channel formation region of each of the plurality of semiconductor layers contains a metal oxide, the metal oxide contains at least indium or zinc
Implementation Method 2
the display device include a liquid crystal element, the liquid crystal element be a light-scattering liquid crystal element, and the liquid crystal element scatter light when being on and transmit light when being off
Data Source
AI summary
A highly visible display device is provided. The display device includes a transistor, a first conductive layer, a second conductive layer, and a third conductive layer. The channel width of the transistor is greater than or equal to 30 μm and less than or equal to 1000 μm. The transistor includes 2 to 50 semiconductor layers, each of which includes a first region, a second region, and a channel formation region. The channel formation region has a region overlaps with the first conductive layer. The first region overlaps with the second conductive layer and does not overlap with the first conductive layer. The second region overlaps with the third conductive layer and does not overlap with the first conductive layer. The third conductive layer has a function of transmitting visible light, and the second region and the third conductive layer in a stacked state have a function of transmitting visible light.