Transparent Oxide and Organic Polymer Heterojunction Transistor
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Solution Overview
Problem
Conventional a-Si:H TFTs and LTPS TFTs face issues of low carrier mobility, high manufacturing costs, and high process temperatures, making them unsuitable for modern display technologies that require thinner, transparent, and flexible elements.
Innovation Solution
A transistor structure is developed using a patterned transparent oxide semiconductor layer and a patterned organic polymer semiconductor layer, forming a heterojunction to enhance carrier mobility while reducing manufacturing costs and process temperatures, with specific embodiments using IGZO and Pentacene materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a-Si:H TFTs are used, then manufacturing process is simpler, but carrier mobility is low and process temperature is high
Solution Approach 1:
The patent employs a composite semiconductor structure combining organic polymer semiconductor and transparent oxide semiconductor layers. This composite approach leverages the advantages of both materials: organic polymers provide ease of low-temperature processing while transparent oxide semiconductors contribute high carrier mobility, thereby resolving the contradiction between manufacturing simplicity and device performance.
Solution Approach 2:
The invention changes the material parameters by transitioning from conventional inorganic semiconductors to organic polymer and transparent oxide semiconductor combinations. This parameter change enables low-temperature processing (improving ease of manufacture) while maintaining or enhancing carrier mobility through the specific properties of transparent oxide semiconductors.
2Reliability
If LTPS TFTs are used, then carrier mobility is higher, but process temperature is even higher increasing manufacturing cost
Solution Approach 1:
The patent fundamentally changes the material system from inorganic LTPS to an organic polymer-oxide semiconductor composite. This parameter change allows achieving high carrier mobility (comparable to or exceeding LTPS) while dramatically reducing process temperature requirements, as organic polymers can be processed at low temperatures and transparent oxide semiconductors can be deposited at moderate temperatures.
Solution Approach 2:
The invention adopts organic polymer semiconductors which can be processed using low-cost solution-based techniques rather than expensive high-temperature vacuum processes required for LTPS. This substitution with cheaper, low-temperature-processable materials reduces manufacturing costs while maintaining performance.
3Ease of manufacture
If conventional TFT materials are used, then manufacturing is established, but transparency and flexibility are compromised
Solution Approach 1:
The patent uses a composite structure where transparent oxide semiconductor layers provide optical transparency and flexible organic polymer layers provide mechanical flexibility. This composite approach maintains ease of manufacture through established deposition techniques while achieving the desired transparency and flexibility properties that conventional opaque inorganic TFT materials cannot provide.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides higher carrier mobility and lower manufacturing costs, enabling the production of flexible and transparent transistors suitable for next-generation display technologies, such as active matrix organic light emitting displays, with improved uniformity and reduced temperature requirements.
Implementation Method 1
the patterned first-type transparent oxide semiconductor layer and the first portion and the second portion of the patterned second-type organic polymer semiconductor layer form a heterojunction therebetween respectively
Data Source
AI summary
A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.