Transparent Semiconductor Layer for 3D Device Alignment
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Solution Overview
Problem
Conventional methods for manufacturing three-dimensional semiconductor devices struggle to accurately determine the positional relationship between semiconductor elements in multiple layers due to the covering of structures with Si layers, which complicates the measurement process and requires additional steps.
Innovation Solution
A semiconductor device is designed with a first semiconductor layer and a second transparent semiconductor layer made of materials like SiC and GaN, allowing for accurate optical detection of the position of elements through the transparent layer, and using wires to connect elements between layers, simplifying the manufacturing process and eliminating the need for additional steps like recrystallization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If an Si layer is formed over the substrate to create a three-dimensional device structure, then the device can achieve multi-layer functionality, but the structure on the substrate is covered and cannot be accurately measured
Solution Approach 1:
The patent applies the principle of optical property changes by using a transparent semiconductor layer instead of an opaque Si layer. The transparent layer allows optical measurement methods to penetrate through and detect the position of semiconductor elements on the substrate, thereby maintaining measurement precision while achieving multi-layer device functionality.
2Measurement precision
If the Si layer is patterned to remove portions not forming semiconductor elements, then the elements can be viewed for positioning, but additional process steps are required
Solution Approach 1:
The patent changes the optical parameter (transparency) of the semiconductor layer to resolve the contradiction. By using a transparent semiconductor material, the layer becomes optically visible without requiring any patterning or removal operations, thus maintaining measurement accuracy while avoiding additional process steps and reducing manufacturing complexity.
3Adaptability or versatility
If conventional opaque layers are used to form subsequent semiconductor layers, then device functionality is achieved, but positional relationship between layers cannot be accurately established
Solution Approach 1:
The patent uses the optical transparency property to enable optical detection and alignment of semiconductor elements across multiple layers. The transparent layer allows measurement beams to pass through and accurately determine the positional relationship between elements in different layers, achieving both device functionality and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate positioning of semiconductor elements, provides good insulation, high heat resistance, and simplifies the manufacturing process by allowing epitaxial growth of high-quality crystalline layers without the need for additional processing steps, enhancing the design and performance of three-dimensional semiconductor devices.
Implementation Method 1
a second semiconductor layer of a transparent semiconductor material... allowing for accurate optical detection of the position of elements through the transparent layer
Implementation Method 2
allowing epitaxial growth of high-quality crystalline layers
Data Source
AI summary
A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.