Transparent Storage Electrode Reduces Kickback Voltage in TFT-LCD

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Solution Overview

Problem

In TFT-LCD displays, the kickback voltage caused by parasitic capacitances between electrodes leads to flickering and display quality deterioration, which existing solutions fail to adequately address without compromising aperture ratio and luminance by increasing storage capacitance or complicating the manufacturing process.

Innovation Solution

A TFT-LCD array substrate with a transparent storage electrode that overlaps with the pixel electrode, forming a storage capacitor, is manufactured using specific layer deposition and patterning processes, allowing for effective reduction of kickback voltage while maintaining high aperture ratio and luminance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a storage capacitor on the common electrode line is used to reduce kickback voltage, then the kickback voltage is effectively reduced, but the common electrode line blocks a portion of the pixel region, decreasing the aperture ratio and display luminance

Engineering Contradiction:
Improvekickback voltage reductionVSAvoidaperture ratio
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent transitions from a planar storage capacitor configuration to a three-dimensional stacked configuration. The storage capacitor is formed by stacking the common electrode, insulating layer, and transparent electrode in vertical layers, allowing the capacitor to occupy the vertical dimension rather than blocking the horizontal pixel region. This dimensional change enables sufficient storage capacitance while maintaining high aperture ratio and display luminance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the storage capacitor capacitance is increased to reduce kickback voltage, then the kickback voltage is reduced, but the storage capacitor structure becomes more complex, adding complexity to the manufacturing process

Engineering Contradiction:
Improvekickback voltage reductionVSAvoidstorage capacitor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The transparent electrode serves multiple functions simultaneously: it acts as one electrode of the storage capacitor, maintains high transparency to allow light transmission, and can be integrated with the common electrode pattern. This multi-functionality reduces the need for additional separate components and simplifies the overall structure while achieving sufficient storage capacitance for kickback voltage reduction.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If a storage capacitor on the gate line is used, then the structure is simpler, but the capacitance of the storage capacitor is small and the kickback voltage cannot be effectively reduced

Engineering Contradiction:
Improvestorage capacitor structure simplicityVSAvoidkickback voltage reduction effectiveness
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent changes the physical parameters of the storage capacitor by forming it as a stacked structure with transparent electrodes and insulating layers. This configuration increases the effective capacitance area and allows for larger capacitance values compared to conventional gate-line capacitors, while maintaining integration with the existing TFT structure. The parameter changes enable effective kickback voltage reduction without excessive structural complexity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces kickback voltage, improving display quality by securing sufficient storage capacitance without blocking the pixel region, thus enhancing both display luminance and aperture ratio.

Implementation Method 1

depositing, successively, a transparent conductive film and a source and drain metal film on the base substrate

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

depositing, successively, a light-blocking metal film, a first insulating layer, a semiconductor film, and a doped semiconductor film on a base substrate

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Data Source

PatentUS8879014B2TFT-LCD array substrate manufacturing method
Publication Date: 2014.11.04 BEIJING BOE OPTOELECTRONCIS TECH CO LTD
  • US8879014B2 patent drawing
  • US8879014B2 patent drawing
  • US8879014B2 patent drawing

AI summary

A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate including a gate line and a data line that define a pixel region, wherein the pixel region is provided with a thin film transistor, a pixel electrode formed on the array substrate, and a storage electrode of transparent structure that overlaps with the pixel electrode and, together with the pixel electrode, constitutes a storage capacitor.