Transverse Thermoelectric Thin-Film Sensor for High-Bandwidth Radiation Detection
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Solution Overview
Problem
Existing thermoelectric radiation detectors face challenges with slow response times and complex production processes, particularly in thin-film sensors where the response time typically does not exceed 1 kHz and requires a buffer layer for anisotropic polycrystalline films.
Innovation Solution
A high-bandwidth thermoelectric thin-film UV, visible light, and infrared radiation sensor is designed with a low molecular weight organic thermoelectric active layer, where the thermal gradient is created and electrical voltage measured perpendicular to the layer, using electrode layers below and above the active layer, with materials selected for low thermal conductivity and high Seebeck coefficient, eliminating the need for a buffer layer and allowing for larger active areas without reducing bandwidth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional thin-film thermoelectric sensors use in-plane TE effect with series-linked thermoelectric elements, then sensitivity is improved, but response time deteriorates (does not exceed 1 kHz)
Solution Approach 1:
The patent transitions from in-plane thermoelectric effect to transverse thermoelectric effect, changing the dimension of heat flow and voltage measurement from parallel to perpendicular relative to the thin-film layer. This dimensional change enables high sensitivity through the transverse geometry while achieving fast response times below 10 ns by eliminating the need for series-linked elements and reducing thermal mass.
2Measurement precision
If anisotropic polycrystalline thin films are used to improve TE effect, then thermoelectric performance is improved, but device complexity increases (requires buffer layer and specific substrate orientation)
Solution Approach 1:
The patent employs isotropic polycrystalline thin films instead of anisotropic single-crystal or oriented polycrystalline films, eliminating the need for buffer layers and specific substrate orientations. This homogenization of material properties simplifies the device structure and manufacturing process while maintaining effective transverse thermoelectric response through the perpendicular measurement geometry.
3Speed
If sensor dimensions are reduced to improve response time, then speed is improved, but manufacturing precision requirements increase
Solution Approach 1:
By switching to transverse thermoelectric measurement with perpendicular voltage detection, the patent achieves fast response times without requiring extreme miniaturization. The transverse geometry inherently reduces thermal mass and heat capacity, enabling sub-10 ns response times with standard thin-film dimensions, thereby avoiding stringent dimensional control requirements.
4Measurement precision
If larger active area is implemented in traditional sensors, then sensitivity is improved, but bandwidth is reduced
Solution Approach 1:
The transverse thermoelectric configuration with perpendicular voltage measurement enables larger active areas to maintain high bandwidth. The transverse geometry reduces thermal mass and heat capacity more effectively than in-plane configurations, allowing large-area sensors to achieve sub-10 ns response times and maintain high bandwidth while collecting more radiation energy across the extended active area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a rise time of less than 10 ns and fall time of 1 μs, significantly improving response speed and simplifying production by eliminating the need for a buffer layer, while maintaining high sensitivity and enabling large-area sensors without compromising bandwidth.
Implementation Method 1
operating on the principle of thermoelectric (TE) effect... Generated heat produce thermal gradient on thermocouples attached to the absorber element, where thermoelectric effect produce voltage
Implementation Method 2
radiation is first converted to the heat, by absorbing radiation in the absorber element
Data Source
AI summary
The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over ( )}2), Seebeck coefficient modulus would be greater than 100 μV/K and its molecular weight is less than 900 Da.