Inverted Trapezoidal Solder Interface for High-Power Chip Cooling
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Solution Overview
Problem
Thermal dissipation in semiconductor chips generating over 500 W of power is challenging, and existing thermal interface materials (TIM) are inadequate for efficient heat transfer from the chip to the lid.
Innovation Solution
A novel inverted trapezoidal shape is given to the thermal interface material (TIM) layer, with a larger base in contact with the lid and a smaller base in contact with the chip, enhancing heat transfer by using flux materials to bond the TIM layer with the chip and lid, and applying heat and pressure to form the trapezoidal shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal interface material (TIM) is used between chip and lid, then thermal dissipation is provided, but the heat dissipation area is limited and insufficient for high power consumption over 500 W
Solution Approach 1:
The TIM layer is transformed from a conventional flat two-dimensional structure to a three-dimensional inverted trapezoidal structure. The larger base of the trapezoid contacts the lid while the smaller base contacts the chip, creating vertical depth and expanding the heat dissipation surface area without increasing the horizontal footprint, thereby resolving the contradiction between limited area and high heat dissipation requirements.
Solution Approach 2:
The TIM layer adopts an asymmetric inverted trapezoidal geometry rather than a symmetric flat structure. The non-uniform thickness distribution with a larger base area at the lid interface and smaller base area at the chip interface creates optimized thermal pathways that maximize heat dissipation efficiency while accommodating the geometric constraints of the packaging structure.
2Area of stationary object
If inverted trapezoidal TIM structure is formed by applying heat and pressure, then heat dissipation area is increased, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process utilizes controlled changes in temperature and pressure parameters to transform the TIM layer into the desired inverted trapezoidal shape. By adjusting these physical parameters during processing, the complex three-dimensional structure is formed from a simpler initial state, making the manufacturing process manageable despite the geometric complexity of the final structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The inverted trapezoidal TIM design significantly increases the heat dissipation area from the chip to the lid, improving thermal conductivity and overall heat management.
Implementation Method 1
a soldering material layer 114 having an inverted trapezoidal shape between the lid 116 and a top surface 204 of the semiconductor chip 104
Implementation Method 2
transferred heat, pressure, or both through the lid 116 to the soldering material layer 114 to form the heat dissipating structure
Implementation Method 3
transferred heat, pressure, or both through the lid 116 to the soldering material layer 114 to form the heat dissipating structure
Implementation Method 4
using flux materials to bond the TIM layer with the chip and lid
Data Source
AI summary
In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.