Trapping Tower for Semiconductor Reaction By-Product Capture
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Solution Overview
Problem
Current reaction by-product trapping apparatuses in semiconductor manufacturing processes fail to efficiently trap particulate reaction by-products due to non-uniform flow velocities and inadequate surface area, leading to increased exhaust pressure, vacuum pump breakdowns, and contamination of wafers.
Innovation Solution
A trapping apparatus with an internal trapping tower featuring vertically arranged disc-type trapping units and a dual-structured diffuser to uniformly heat and diffuse gases, increasing residence time and surface area, and a radially arranged trapping disc with exhaust holes to concentrate and disperse gas flows, ensuring uniform temperature and flow velocity for efficient trapping of reaction by-products as a thin film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a conventional trapping plate with holes is used, then the structure is simple, but the flow velocity is non-uniform and trapping efficiency is low
Solution Approach 1:
The trapping plate is divided into multiple trapping elements arranged in a specific pattern, where each element contributes to uniform flow distribution. This segmentation allows the system to maintain structural simplicity while achieving enhanced trapping efficiency through distributed flow management across multiple elements.
Solution Approach 2:
The invention transitions from a conventional two-dimensional trapping plate to a three-dimensional trapping tower structure with multiple levels and layers. This dimensional expansion provides increased surface area for trapping, improved flow distribution, and better residence time characteristics while maintaining operational simplicity.
2Productivity
If the trapping surface area is increased, then trapping efficiency improves, but the device size and complexity increase
Solution Approach 1:
The trapping tower employs a nested structure where multiple trapping elements are arranged concentrically or in layered configurations. This nesting approach maximizes the trapping surface area within a compact footprint, allowing high trapping efficiency without proportionally increasing the overall device size.
Solution Approach 2:
By transitioning to a vertical three-dimensional structure, the invention achieves large trapping surface area through height rather than horizontal expansion. Multiple trapping levels are stacked vertically, providing extensive trapping capacity while maintaining a compact horizontal footprint suitable for semiconductor manufacturing environments.
3Duration of action of moving object
If gas flow velocity is reduced for better trapping, then residence time increases, but exhaust pressure increases
Solution Approach 1:
The gas flow is segmented into multiple streams as it passes through the distributed trapping elements. This segmentation creates numerous small flow paths that collectively provide extended residence time while maintaining lower pressure drops compared to a single large flow path, thus achieving better trapping without excessive exhaust pressure buildup.
Solution Approach 2:
The trapping tower utilizes vertical flow progression through multiple elevated trapping levels. Gas flows upward or downward through successive stages, increasing residence time through extended vertical path length while the distributed structure prevents excessive pressure accumulation that would occur in a single-stage horizontal system.
4Productivity
If a uniform flow velocity is achieved, then trapping efficiency improves, but the structure becomes more complex
Solution Approach 1:
The trapping elements are arranged in asymmetric patterns optimized for uniform flow distribution. Rather than symmetric configurations that would require complex flow control mechanisms, the asymmetric arrangement of trapping elements naturally promotes uniform velocity distribution across the flow path, achieving high trapping efficiency with simpler structure.
Solution Approach 2:
The trapping structure is designed to self-regulate flow distribution through its geometric configuration. The arrangement of trapping elements creates natural flow distribution patterns that promote uniform velocity without requiring external flow control devices or complex active control systems, thereby achieving uniform flow and high efficiency with minimal added complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively traps reaction by-products in a thin film form with high efficiency, reducing flow velocities and maintaining uniform temperature distribution, thereby preventing contamination and extending the surface area for improved trapping performance.
Implementation Method 1
heats the unreacted gas with a heater... maintaining uniform temperature distribution
Implementation Method 2
a dual-structured diffuser to uniformly heat and diffuse gases, increasing residence time and surface area
Implementation Method 3
trap the reaction by-products with high efficiency... traps the reaction by-products in the form of a thin film
Data Source
AI summary
The present disclosure relates to an apparatus for trapping a reaction by-products produced during an organic film deposition process, and an object of the present disclosure is to provide a trapping apparatus having an internal trapping tower in which disc-type trapping units, which each have structure-type trapping plates having a large surface area per unit area in order to trap reaction by-products contained in an unreacted gas introduced into the trapping apparatus after an organic film deposition process, among semiconductor manufacturing processes, is performed in the process chamber, and a trapping disc configured to concentrate a flow of the gas or disperse or discharge the gas, are vertically arranged in multiple layers, such that the trapping apparatus traps the reaction by-products in the form of a thin film in a state in which the residence time of the gas is increased and uniform temperature distribution is maintained.