Semiconductor Treatment Liquid with Particulate Metal Control
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Solution Overview
Problem
The presence of metal impurities in semiconductor manufacturing treatment liquids, particularly developers and rinsing liquids, leads to defects such as particles, affecting the yield and reliability of semiconductor products, despite efforts to reduce overall metal content.
Innovation Solution
The use of a treatment liquid containing specific metal atoms like Cu, Fe, and Zn, with a controlled particulate metal content of 0.01 to 100 mass ppt, measured by SP-ICP-MS, and a storage container with specific materials and cleaning protocols to minimize metal elution and particle formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the amount of metal impurities in treatment liquid is reduced, then the occurrence of defects is suppressed, but the manufacturing precision cannot be necessarily improved
Solution Approach 1:
The patent changes the parameter from total metal impurity concentration to particulate metal content concentration, specifying that the treatment liquid contains particulate metal with a concentration of 0.01 to 100 mass ppt. This parameter transformation resolves the contradiction by identifying that particulate metal content, not total metal content, is the critical factor affecting both defect occurrence and fine pattern formation
Solution Approach 2:
The patent replaces conventional total metal content measurement methods with SP-ICP-MS (Single-Particle Inductively Coupled Plasma Mass Spectrometry) technology. This substitution enables detection and control of particulate metal at the ppt level, allowing simultaneous achievement of low defect occurrence and high manufacturing precision for fine resist patterns
2Reliability
If the purity of treatment liquid is increased, then the yield and reliability are improved, but the complexity of maintaining purity increases
Solution Approach 1:
The patent applies preliminary action by pre-controlling the particulate metal content during treatment liquid preparation and storage. By establishing specific particulate metal concentration ranges (0.01 to 100 mass ppt) before use and implementing preventive storage protocols, the system achieves high reliability without requiring complex real-time purification systems during manufacturing
Solution Approach 2:
The patent introduces particulate metal content control as an intermediary parameter between total metal content and defect formation. This intermediary measurement approach, using SP-ICP-MS technology, provides a practical control point that balances purity requirements with system complexity, enabling reliable yield improvement through manageable concentration specifications
Data Source
AI summary
An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor, a pattern forming method using the same, and a method of manufacturing an electronic device using the same. The treatment liquid for manufacturing a semiconductor comprising: one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.