Semiconductor Treatment Liquid Purification for Ultrafine Pattern Quality
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Solution Overview
Problem
The formation of particles including metal atoms during the development and rinsing steps in the manufacturing of semiconductor devices, particularly in the formation of ultrafine patterns, adversely affects the quality of the patterns formed.
Innovation Solution
A treatment liquid for semiconductors comprising a quaternary ammonium compound, additives such as anionic, nonionic, or cationic surfactants, and specific metal atoms, controlled within specific mass ratios to minimize the formation of metal particles, using a combination of filtration, ion exchange, and distillation to ensure optimal dispersion and reduce metal content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional development and rinsing processes are used in ultrafine pattern formation, then manufacturing process simplicity is maintained, but metal particles are formed that degrade pattern quality
Solution Approach 1:
The patent extracts and removes metal atoms from the treatment liquid through filtration and ion exchange processes. The liquid filtration step removes particulate matter including metal particles, while the ion exchange step specifically targets and removes metal ions, thereby eliminating the source of metal particle formation that degrades pattern quality
Solution Approach 2:
The patent applies preliminary purification actions to the treatment liquid before it contacts the photoresist pattern. By performing filtration and ion exchange treatments in advance, the liquid is pre-cleaned of metal contaminants that would otherwise form particles during the development and rinsing processes, preventing quality degradation before it occurs
2Object-generated harmful factors
If multiple purification steps are added to reduce metal content, then particle formation is reduced, but process complexity increases
Solution Approach 1:
The patent combines multiple purification functions into an integrated treatment liquid preparation system. The filtration step and ion exchange step are merged into a sequential purification train that works together to remove both particulate and ionic metal contaminants, achieving comprehensive purification without requiring separate complex systems for each function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces the formation of metal particles, enhancing the quality of ultrafine patterns and minimizing defects in semiconductor manufacturing processes.
Implementation Method 1
using a combination of filtration, ion exchange, and distillation to ensure optimal dispersion and reduce metal content
Implementation Method 2
using a combination of filtration, ion exchange, and distillation to ensure optimal dispersion and reduce metal content
Implementation Method 3
using a combination of filtration, ion exchange, and distillation to ensure optimal dispersion and reduce metal content
Data Source
AI summary
A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.