Trench Semiconductor Structure With Air Gap for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing parasitic capacitance and current leakage as they become more integrated, leading to increased RC delay and interference with normal transistor operation.
Innovation Solution
A semiconductor device is fabricated with a trench structure that includes a gate insulating layer, gate electrode, and air gap formation, reducing parasitic capacitance and current leakage by interposing an air gap between the semiconductor layer and substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized and highly integrated, then device density and integration level improve, but parasitic capacitance and current leakage increase
Solution Approach 1:
The patent extracts the harmful semiconductor substrate material from the region beneath the transistor channel by forming an air gap. This removes the source of parasitic capacitance and current leakage while maintaining the transistor's functional structure, directly resolving the contradiction between high integration and parasitic effects
Solution Approach 2:
The patent introduces a vertical air gap dimension between the semiconductor layer and substrate, transitioning from a traditional planar contact structure to a suspended structure. This dimensional change eliminates parasitic capacitance pathways while allowing continued horizontal integration
2Productivity
If semiconductor devices are miniaturized and highly integrated, then device density improves, but RC delay increases
Solution Approach 1:
By extracting the substrate material from beneath the channel region and replacing it with an air gap, the patent removes the high-dielectric-constant substrate that contributes to RC delay. This reduces the capacitive load on transistor gates, thereby decreasing RC delay while maintaining device integration
3Productivity
If semiconductor devices are miniaturized and highly integrated, then device density improves, but current leakage increases
Solution Approach 1:
The patent extracts the conductive substrate material from the region beneath the transistor channel and replaces it with an insulating air gap. This eliminates the substrate-induced current leakage pathways while preserving the transistor's source-drain channel functionality and enabling higher device integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic capacitance and current leakage, improving the operating characteristics of transistors by minimizing RC delay and ensuring normal operation.
Implementation Method 1
parasitic capacitance and current leakage, leading to increased RC delay
Implementation Method 2
parasitic capacitance and current leakage
Data Source
AI summary
A semiconductor device includes: a semiconductor layer, a gate insulating layer, and a gate electrode sequentially formed in a trench formed to a predetermined depth from a first surface of a first substrate; a third substrate bonded to a second surface opposite to the first surface of the first substrate; and an air gap interposed between the semiconductor layer and the first substrate and between the semiconductor layer and the third substrate.