Trench Bottom Semiconductor Structure for Turn-On and Breakdown Balance
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Solution Overview
Problem
The turn-on characteristic of semiconductor devices with an electrically floating barrier region is compromised when it contacts a well region in the semiconductor substrate, leading to suboptimal performance.
Innovation Solution
Incorporating a trench bottom portion that is electrically floating and positioned between the accumulation region and the drift region, which improves the turn-on characteristic and breakdown voltage of the semiconductor device by reducing electric field strength and enhancing avalanche capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If an electrically floating barrier region is provided in the semiconductor device, then the breakdown voltage is improved, but the turn-on characteristic deteriorates when the barrier region contacts the well region
Solution Approach 1:
The barrier region is divided into two separate regions: a first barrier region and a second barrier region, with the well region positioned between them. This segmentation prevents direct contact between the electrically floating barrier region and the well region, thereby resolving the turn-on characteristic deterioration while maintaining the breakdown voltage improvement through the distributed barrier structure.
Solution Approach 2:
The well region is positioned as an intermediary between the first barrier region and the second barrier region. This intermediary positioning prevents direct contact between the electrically floating barrier region and the well region, eliminating the harmful interaction that causes turn-on characteristic deterioration while allowing the barrier regions to maintain their voltage-blocking function.
2Volume of moving object
If the barrier region is positioned closer to improve device compactness, then the device size is reduced, but the electric field strength increases leading to reduced avalanche capability
Solution Approach 1:
The barrier region is segmented into first and second barrier regions separated by the well region. This segmentation distributes the voltage-blocking function across multiple regions, allowing for a more compact overall device design while reducing the electric field strength at any single location through the distributed structure.
Solution Approach 2:
Different regions of the device are assigned different functions: the first and second barrier regions provide voltage blocking, while the well region positioned between them provides electrical connection and field distribution. This local quality differentiation allows compact design while controlling electric field strength through optimized regional functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the turn-on characteristic and breakdown voltage of the semiconductor device, improving its operational efficiency and preventing latch-up, while maintaining the reverse recovery resistance.
Implementation Method 1
improves the turn-on characteristic and breakdown voltage of the semiconductor device by reducing electric field strength and enhancing avalanche capability
Data Source
AI summary
Provided is a semiconductor device including an active section having a transistor section and a diode section, and an edge termination structure section provided to an outer circumference of the active section, in which the transistor section has a drift region of a first conductivity type which is provided in a semiconductor substrate, a base region of a second conductivity type which is provided above the drift region, a trench portion extending from a front surface of the semiconductor substrate to the drift region, and a trench bottom portion of the second conductivity type which is provided in a lower end of the trench portion, and the diode section is provided between a transistor section in proximity to the edge termination structure section, and the edge termination structure section in a top view.