Trench Capacitor Layout for Selective Capacitance Density
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to achieve precise control in fabricating multilayer trench capacitors with high capacitance density while maintaining small device dimensions, which is crucial for advanced device density and performance in semiconductor devices like DRAMs.
Innovation Solution
The method involves forming trench capacitor structures with alternating dielectric and conductive layers in trenches of varying depths and widths, and adjusting the number of layer pairs to achieve selective capacitance, using techniques such as plasma etching and chemical mechanical polishing to maintain planarity and facilitate electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If trench capacitor structures with alternating dielectric and conductive layers are formed in trenches of varying depths and widths, then capacitance density is improved, but device dimensions and manufacturing complexity increase
Solution Approach 1:
The capacitor structure is divided into multiple segments with alternating dielectric and conductive layers, allowing independent optimization of each layer's properties and thickness to achieve high capacitance density while maintaining manufacturability
Solution Approach 2:
The patent transitions from planar capacitor designs to three-dimensional trench structures with vertical stacking of multiple dielectric and conductive layers, utilizing the vertical dimension to increase capacitance density without proportionally increasing footprint area
2Manufacturing precision
If plasma etching and chemical mechanical polishing are used to maintain planarity, then manufacturing precision is improved, but production time and process complexity increase
Solution Approach 1:
Chemical mechanical polishing is performed at intermediate stages during the formation of alternating layers to pre-establish planarity before subsequent deposition steps, reducing the need for extensive final planarization and accelerating overall production
Solution Approach 2:
The manufacturing process employs continuous alternating deposition of dielectric and conductive layers with intermittent polishing steps, maintaining continuous production flow while periodically restoring surface planarity to enable precise subsequent processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of semiconductor devices with adjustable capacitance levels, enhancing device performance and yield by reducing errors associated with non-planar surfaces and improving production output.
Implementation Method 1
using techniques such as plasma etching and chemical mechanical polishing to maintain planarity
Implementation Method 2
using techniques such as plasma etching and chemical mechanical polishing to maintain planarity
Data Source
AI summary
A semiconductor device includes a substrate. The semiconductor device further includes a first capacitor in the substrate. The semiconductor device further includes a first set of contacts. The first set of contacts includes a first contact electrically connected to the first capacitor, and a second contact electrically connected to the first capacitor, wherein the first contact is spaced from the second contact by a first distance. The semiconductor device further includes a second capacitor in the substrate. The semiconductor device further includes a second set of contacts. The second set of contacts includes a third contact electrically connected to the second capacitor, and a fourth contact electrically connected to the second capacitor, wherein the third contact is spaced from the fourth contact by a second distance, and the second distance is different from the first distance.