Trench Capacitor Edge Pattern for Thermal Stress Relief

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Solution Overview

Problem

The challenge with trench capacitors is that the mismatch in thermal expansion coefficients between the substrate and capacitor components leads to stress, causing substrate bending and trench burnout, particularly at the edges, which degrades manufacturing yields.

Innovation Solution

The trench capacitor design incorporates edge in-trench capacitor segments with greater widths and/or increased pitch at the edges, along with corresponding substrate segments, to absorb stress and enhance rigidity, reducing bending and burnout.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If uniform trench segments are used across the trench capacitor, then manufacturing is simplified, but substrate bending and trench burnout occur at edges due to thermal expansion stress

Engineering Contradiction:
Improvetrench pattern uniformityVSAvoidsubstrate stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality by making the trench segments non-uniform: edge trench segments have greater widths than center trench segments. This local variation in geometry compensates for thermal expansion stress concentrated at the edges, preventing substrate bending and trench burnout while maintaining manufacturing feasibility.

Inventive Principle:
Principle #3Local quality

2Strength

If edge trench segments have greater widths, then stress absorption and rigidity are enhanced, but device complexity increases

Engineering Contradiction:
Improveedge rigidityVSAvoidtrench pattern variation
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent employs asymmetry by designing edge trench segments with greater widths compared to the center trench segments. This asymmetric geometry is strategically positioned at the edges where thermal expansion stress is highest, providing enhanced rigidity and stress absorption without requiring complex variations throughout the entire device structure.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively mitigates substrate bending and trench burnout, thereby increasing bulk manufacturing yields by providing enhanced stress absorption and rigidity at the edges of the trench capacitor.

Implementation Method 1

the mismatch in thermal expansion coefficients between the substrate and capacitor components leads to stress

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS20250113497A1Trench pattern for trench capacitor yield improvement
Publication Date: 2025.04.03 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250113497A1 patent drawing
  • US20250113497A1 patent drawing
  • US20250113497A1 patent drawing

AI summary

Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.