Semiconductor Trench Capacitor Sidewall Groove Segmentation
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Solution Overview
Problem
In semiconductor structures with trenches, achieving a high electric capacitance while maintaining structural integrity and manufacturing feasibility is challenging due to the narrow dimensions and potential for short-circuiting, especially with the presence of grooves on the sidewalls of the trenches.
Innovation Solution
A semiconductor substrate with trenches having grooves on the sidewalls, where the grooves extend in the depth direction, allowing for a stacked structure of dielectric and conductive layers that enhances capacitance while facilitating easy washing and reducing the likelihood of short-circuiting, using a method involving a catalyst layer and etching processes to form the trenches and conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If grooves are provided on the sidewalls of trenches to increase capacitance, then electric capacitance is improved, but the risk of short-circuiting increases
Solution Approach 1:
The sidewall surface is segmented into multiple grooves that extend in the depth direction, dividing the continuous sidewall into distinct regions. This segmentation increases the effective surface area for capacitance while maintaining sufficient spacing between grooves to prevent short-circuiting between adjacent conductive layers.
Solution Approach 2:
The grooves extend in the depth direction (vertical dimension) rather than only in the horizontal direction, utilizing the third dimension to increase surface area. This vertical extension of grooves maximizes capacitance within the available trench depth while maintaining horizontal spacing to avoid short-circuits.
2Quantity of substance
If narrow trench dimensions are used to increase capacitance density, then electric capacitance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The groove width varies along the depth direction, with the groove width being different at different depths. This local variation in geometry allows optimization of capacitance in regions where spacing is less critical while maintaining sufficient spacing at critical interfaces to prevent short-circuits, thereby reducing overall manufacturing precision requirements.
3Quantity of substance
If grooves extend deeply in the trench to increase capacitance, then electric capacitance is improved, but structural integrity may deteriorate
Solution Approach 1:
The sidewall is segmented into multiple grooves rather than one large groove, distributing the structural stress across multiple smaller features. This segmentation maintains structural integrity better than a single deep groove while achieving similar or greater capacitance through increased surface area.
Solution Approach 2:
The grooves extend partially through the trench depth rather than fully to the bottom, providing sufficient surface area for high capacitance while leaving the lower portion of the sidewall intact to maintain structural support and prevent collapse.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of capacitors with high electric capacitance and reliability, maintaining structural integrity and reducing the risk of short-circuiting, while allowing for high-yield manufacturing by ensuring the grooves on the sidewalls do not obstruct the formation of conductive and dielectric layers.
Implementation Method 1
forming a catalyst layer on a region of the main surface that corresponds to the one or more openings... supplying an etching agent to the catalyst layer to etch the region with an assist from the catalyst layer
Data Source
AI summary
According to an embodiment, a structure includes a substrate including a semiconductor material, wherein the substrate is provided with one or more recesses each of which has a depth direction that is equal to a thickness direction of the substrate, and the one or more recesses include a sidewall on which a plurality of grooves each extending in the depth direction are provided.