Trench Capacitor Structure to Reduce Storage Layer Loss
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Solution Overview
Problem
The semiconductor industry faces challenges in minimizing capacitance loss due to the loss of storage conductive layers during the manufacturing of stack capacitors, particularly as device geometries shrink.
Innovation Solution
A semiconductor structure is designed with a landing pad layer, a middle patterned dielectric layer, a top patterned dielectric layer, and a plurality of trench conductive layers. The middle patterned dielectric layer includes first openings, and the top patterned dielectric layer includes second openings aligned with the first openings. Trench conductive layers are disposed through these openings, with specific side layer configurations and dielectric layer coverages to minimize conductive layer loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device geometries are reduced to increase density, then productivity and functionality are improved, but manufacturing precision and control become more difficult
Solution Approach 1:
The patent divides the capacitor structure into multiple discrete components: separate bottom electrode, dielectric layer, and top electrode layers. Each layer is formed through distinct manufacturing steps with controlled patterning, allowing independent optimization of each component's geometry and reducing cumulative dimensional errors that would occur in monolithic structures.
Solution Approach 2:
The patent transitions from planar capacitor designs to three-dimensional stacked capacitor structures with vertical trench conductive layers. This dimensional change increases capacitance density by utilizing the vertical dimension, thereby improving productivity without compromising manufacturing precision in the lateral dimensions.
2Ease of manufacture
If stack capacitor manufacturing operations are simplified, then ease of manufacture is improved, but capacitance loss due to storage conductive layer loss increases
Solution Approach 1:
The patent forms the bottom electrode layer and dielectric layer stack before subsequent processing steps. This preliminary formation ensures that the storage conductive layer is already in place and protected, preventing loss during later manufacturing operations while maintaining process simplicity.
Solution Approach 2:
The dielectric layer serves as an intermediary protective barrier between the bottom electrode and subsequent processing steps. This intermediate layer prevents direct exposure and potential loss of the storage conductive layer during manufacturing while allowing continued process simplification.
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a landing pad layer, a middle patterned dielectric layer, a top patterned dielectric layer, and a plurality of trench conductive layers. The middle patterned dielectric layer is disposed over the landing pad layer, in which the middle patterned dielectric layer includes a plurality of first openings. The top patterned dielectric layer is disposed over the middle patterned dielectric layer, in which the top patterned dielectric layer includes a plurality of second openings substantially aligned with the first openings, respectively. Each of the trench conductive layers is disposed through a portion of one of the second openings and a portion of one of the first openings, and each of the trench conductive layers has two side layers opposite to each other.