Trench Capacitor With Segmented Dielectric Layers For Tunable Capacitance
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Solution Overview
Problem
Trench capacitors in existing electronic devices are limited to low-voltage and low-frequency applications, with fixed capacitance density, making them unsuitable for higher-voltage or higher-frequency applications, and they require frequent refresh of stored charge, which is not acceptable for applications involving tens of volts or RF signals.
Innovation Solution
The electronic device features a trench capacitor with an alternating layer sequence of dielectric and conductive layers, allowing for flexible capacitance tuning through internal contact pads, enabling higher capacitance density and adaptability to different applications by varying the interconnect configurations, and incorporating a switching element for dynamic capacitance adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If trench capacitors are designed for high capacitance density with fixed structural dimensions, then capacitance density is improved, but adaptability to different applications and voltage/frequency ranges is worsened
Solution Approach 1:
The patent implements dynamic capacitance adjustment by providing multiple internal contact pads that can be selectively connected to different conductive layers through switching elements. This allows the capacitance value to be dynamically changed during operation by selecting different combinations of conductive layers, thereby adapting to different application requirements while maintaining high capacitance density through the trench structure.
Solution Approach 2:
The capacitor structure is segmented into multiple independent conductive layers separated by dielectric layers, with each layer accessible through internal contact pads. This segmentation allows selective activation of different capacitor sections, enabling flexible capacitance tuning and adaptation to various voltage and frequency requirements while maintaining the high-density trench configuration.
2Manufacturing precision
If trench capacitors are optimized for low-voltage DRAM applications with small pitch, then manufacturing precision is improved, but suitability for higher-voltage or higher-frequency applications is worsened
Solution Approach 1:
The patent creates a universal trench capacitor structure that can function across multiple voltage and frequency ranges by incorporating multiple conductive layers with different breakdown voltage characteristics. The same trench structure optimized for small pitch can serve both low-voltage DRAM applications and high-voltage RF applications through selective activation of different conductive layer combinations, eliminating the need for separate optimized structures.
3Quantity of substance
If capacitor electrodes are arranged in dense pore arrays to increase area, then capacitance density is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple capacitor functions into a single trench structure by stacking multiple conductive layers and dielectric layers vertically. Instead of requiring separate capacitor devices or complex interconnections between multiple trenches, the invention combines the functionality of multiple capacitors in one integrated structure, achieving high capacitance density while simplifying the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the use of trench capacitors in higher-voltage and higher-frequency applications, achieving capacitance values up to 300 nF/mm2 with breakdown voltages between 10 and 70 V, and allows for real-time capacitance tuning, enhancing the flexibility and efficiency of electronic circuits.
Implementation Method 1
the capacitance of a capacitor device scales with the area of the capacitor electrodes, with the dielectric constant of the dielectric material between the capacitor electrodes, and with the inverse of the distance between the capacitor electrodes
Implementation Method 2
The electrically conductive layers are electrically isolated from each other and from the substrate by interposed dielectric layers
Data Source
AI summary
An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.