Trench-Type Capacitor for Semiconductor Noise Control
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Solution Overview
Problem
Conventional decoupling capacitors in semiconductor devices have insufficient capacitance due to their planar design, leading to inadequate noise spike control and degradation of electrical characteristics as semiconductor device sizes decrease.
Innovation Solution
A trench-type capacitor is integrated into the semiconductor substrate with a concave portion, featuring node patterns, impurity diffusion regions, and dielectric layers, which increases capacitance and improves electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a planar-type capacitor is used in a semiconductor substrate, then the device size can be reduced, but the capacitance becomes insufficient and noise spike control deteriorates
Solution Approach 1:
The patent transitions from a planar (2D) capacitor design to a trench-type (3D) capacitor design by forming a concave portion in the semiconductor substrate. This vertical dimension addition allows the capacitor to achieve higher capacitance within the same footprint area, resolving the contradiction between small device size and sufficient capacitance.
Solution Approach 2:
The capacitor structure is nested within the semiconductor substrate by forming a concave portion that houses the capacitor elements. This nesting approach maximizes the use of available space within the substrate, allowing the capacitor to be integrated without increasing the overall device footprint while achieving higher capacitance.
2Area of moving object
If the size of the decoupling capacitor is reduced to match smaller semiconductor devices, then device integration is improved, but the capacitance becomes insufficient
Solution Approach 1:
By forming the capacitor in a trench structure within the substrate, the design exploits the vertical dimension to increase capacitance without increasing the planar area. The concave portion allows for greater electrode surface area and dielectric volume within the same footprint, maintaining noise spike control in smaller devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The trench-type capacitor enhances capacitance and electrical performance, effectively controlling noise spikes and improving the functionality of semiconductor devices, especially in smaller form factors.
Implementation Method 1
at least one first impurity diffusion region... A second impurity diffusion region may be disposed in the second active region
Implementation Method 2
A trench-type capacitor according to an embodiment may include an inactive region... The trench-type capacitor may further include a dielectric layer
Data Source
AI summary
Provided is a trench-type capacitor. To form the capacitor, first and second active regions are disposed in a semiconductor substrate. Node patterns are disposed in the first active region. Each node pattern may have a conductive pattern and an insulating pattern, which are sequentially stacked. Impurity diffusion regions are disposed in the vicinity of the node patterns. Substrate connection patterns in electrical contact with the first and second active regions are disposed. Node connection patterns in electrical contact with the node patterns are disposed in the vicinity of the first and second active regions. In addition, a semiconductor device having the trench-type capacitor and a semiconductor module having the semiconductor device is provided.