Front and Back Electrode Trench Capacitor for Semiconductor Integration
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Solution Overview
Problem
Conventional front and back electrode type capacitors are difficult to form using semiconductor processes, limiting their integration in semiconductor integrated circuits and capacitance density improvement.
Innovation Solution
A front and back electrode type trench capacitor is designed using a semiconductor process, featuring insulating base materials with overlapping bottomed trenches and conductors connected via external electrodes, allowing for miniaturization and shape control, enabling high capacitance density and withstand voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional front and back electrode type capacitor is formed using anodic oxidation and cylindrical electrodes, then the capacitor structure is achieved, but it is difficult to form using semiconductor processes
Solution Approach 1:
The invention changes the geometric parameters of the electrode structure from cylindrical to planar/trench-based configuration. The electrodes are formed as flat conductive layers filling trenches or extending from surfaces, rather than cylindrical shapes. This parameter change enables compatibility with standard semiconductor fabrication processes while achieving the front and back electrode configuration.
Solution Approach 2:
The invention replaces the mechanical/anodic oxidation process with semiconductor-based fabrication methods. Instead of using anodic oxidation to create porous structures and cylindrical electrodes, the patent employs photolithography, etching, and thin-film deposition techniques to form the trench structures and conductive electrodes, thereby substituting a mechanical/chemical process with a controlled semiconductor manufacturing system.
2Quantity of substance
If trench size is reduced to improve capacitance density, then capacitance per unit volume increases, but manufacturing precision requirements increase
Solution Approach 1:
The invention segments the capacitor structure into discrete trenches with defined geometries that can be precisely controlled through photolithography and etching processes. By dividing the capacitor into multiple identical trench units, the manufacturing precision requirement is distributed across standardized features rather than requiring extreme precision in a single large structure. The trench dimensions and spacing are optimized to achieve high capacitance density while remaining within the capabilities of semiconductor fabrication precision.
Data Source
AI summary
A capacitor that includes an insulating base material having a first main surface and a second main surface facing each other, the insulating base material defining first and second trenches extending from the first main surface into the base material such that first trench and the second trench overlap each other; a first conductor in the first trench; a first external electrode on the first main surface of the base material and connected to the first conductor; a second conductor in the second trench; and a second external electrode on the second main surface of the base material and connected to the second conductor.