Trench Capacitor Structure for High Capacitance in Thin Silicon Components
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Solution Overview
Problem
Thin film silicon capacitors have lower capacitance relative to their mounting area compared to multilayer ceramic capacitors, necessitating research into high-capacitance thin film silicon capacitors for reduced thickness in portable IT products.
Innovation Solution
A capacitor component design featuring a substrate with interlayers and trench capacitors connected by through-vias, utilizing semiconductor materials and insulating materials to enhance capacitance per unit area, with trench capacitors having a metal-insulator-metal structure and high-K dielectric layers for improved electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If thin film silicon capacitors are used to reduce thickness, then the thickness is reduced, but the capacitance per unit area decreases
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional trench capacitors that extend vertically into the substrate. By etching deep trenches and filling them with high-K dielectric materials and conductive layers, the capacitor structure utilizes the vertical dimension to increase effective capacitance without increasing planar footprint, thereby maintaining thin overall profile while achieving higher capacitance per unit area
Solution Approach 2:
The patent employs composite material structures combining multiple layers including high-K dielectric materials (such as hafnium oxide, zirconium oxide), conductive materials (tungsten, copper, aluminum), and insulating materials. This composite approach enables simultaneous achievement of high capacitance density and thin overall thickness by optimizing the electrical properties of each layer while maintaining compact dimensions
2Quantity of substance
If trench capacitors with high-K dielectric layers are used, then capacitance per unit area increases, but device complexity increases
Solution Approach 1:
The patent divides the capacitor structure into segmented functional layers within the trench: bottom electrode layer, high-K dielectric layer, and top electrode layer. This segmentation allows each layer to be optimized independently for its specific function while being integrated into a unified trench structure, achieving high capacitance density through systematic layering without excessive complexity
Solution Approach 2:
The trench structure serves multiple functions simultaneously: it provides mechanical support, defines the capacitor volume, contains the high-K dielectric material, and facilitates electrical connections through integrated vias. This multi-functionality reduces the need for separate structural elements, thereby increasing capacitance density without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves high capacitance per unit area by connecting trench capacitors in parallel through conductive vias, enhancing the electrical connection and capacitance performance while maintaining a reduced thickness suitable for portable IT products.
Implementation Method 1
a first trench capacitor disposed in the first trench, a second trench capacitor disposed in the second trench
Implementation Method 2
trench capacitors having a metal-insulator-metal structure and high-K dielectric layers for improved electrical properties
Implementation Method 3
a through-via passing through the substrate to connect the first trench capacitor and the second trench capacitor to each other
Data Source
AI summary
A capacitor component includes a substrate having first and second surfaces opposing each other, a first interlayer disposed on the first surface of the substrate, the first interlayer including a first trench, a first trench capacitor disposed in the first trench, a second interlayer disposed on the second surface of the substrate, the second interlayer including a second trench, a second trench capacitor disposed in the second trench, and a through-via passing through the substrate to connect the first trench capacitor and the second trench capacitor to each other.