Trench Capacitor Dies With Measurement Structures for Yield Recovery

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Solution Overview

Problem

The semiconductor industry faces challenges in scaling down passive semiconductor devices like capacitors to meet demands for higher storage capacity, faster processing, and lower costs, while maintaining high manufacturing yield due to increased complexity in forming these devices.

Innovation Solution

The implementation of trench capacitor dies with measurement structures that include interconnects, bonding structures, and reserve groups of capacitors, allowing for detection and reconfiguration of defective capacitors to maintain desired functionality and yield, using conductive pads and solder bumps for electrical connections and laser cutting for reconfiguration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If passive semiconductor devices are scaled down to increase storage capacity and processing speed, then device density and performance are improved, but manufacturing yield deteriorates due to increased complexity in forming these devices

Engineering Contradiction:
Improvedevice densityVSAvoidmanufacturing yield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements measurement structures and reserve capacitor groups before final device completion. During intermediate testing, defective capacitors are identified and disconnected from the circuit using laser cutting of conductive lines. This preliminary detection and isolation approach allows the device to be salvaged by reconnecting through reserve capacitors, thereby maintaining high manufacturing yield despite scaling challenges

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the electrical connectivity parameter of the device by selectively cutting and reconnecting conductive lines. By altering the circuit configuration from including defective capacitors to excluding them through laser cutting and reconnection to reserve groups, the device maintains optimal electrical performance and reliability despite physical scaling

Inventive Principle:
Principle #35Parameter changes

2Reliability

If measurement structures and reserve capacitor groups are added to enable defect detection and reconfiguration, then manufacturing yield is improved, but device complexity increases

Engineering Contradiction:
Improvemanufacturing yieldVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The measurement structures serve multiple functions: they detect defective capacitors, enable laser cutting of conductive lines, and facilitate reconnection to reserve capacitor groups. This multi-functionality reduces the need for separate dedicated structures for each function, thereby limiting the increase in overall device complexity while achieving improved manufacturing yield

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent segments the capacitor array into functional groups with associated measurement structures and reserve groups. This segmentation allows independent testing and isolation of defective portions without affecting the entire device, managing complexity by creating modular, independently manageable units

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20240128261A1Passive Device Dies With Measurement Structures
Publication Date: 2024.04.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240128261A1 patent drawing
  • US20240128261A1 patent drawing
  • US20240128261A1 patent drawing

AI summary

A structure and method for improving manufacturing yield of passive device dies are disclosed. The structure includes first and second groups of capacitors disposed on a substrate, an interconnect structure disposed on the first and second groups of capacitors, first and second bonding structures disposed on the first and second conductive lines, respectively, and first and second measurement structures connected to the first and second conductive lines, respectively, and configured to measure electrical properties of the first and second groups of capacitors, respectively. The interconnect structure includes first and second conductive line connected to the first and second groups of trench capacitors, respectively. The first bonding structure is electrically connected to the first group of capacitors and the second bonding structure is electrically isolated from the first and second groups of capacitors. The first and second measurement structures are electrically isolated from each other.