Electrically Coupled Trench Capacitors for High Density Power Delivery
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Legacy capacitor implementations, such as discrete land side capacitors and die side capacitors, face challenges in achieving high capacitance density close to dies due to their physical placement and parasitic elements, which hinder efficient power delivery and RF/I/O operations in compact electronic devices.
Innovation Solution
The development of electrically coupled trench capacitors within a substrate, utilizing high-k dielectric materials and advanced manufacturing techniques like atomic layer deposition, allows for high capacitance density and minimal lateral sizes, enabling closer proximity to dies and reducing parasitic effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If discrete land side capacitors or die side capacitors are used, then capacitor placement is simple, but capacitance density near dies is insufficient and parasitic elements increase
Solution Approach 1:
The patent transitions from planar capacitor placement to three-dimensional trench structures within the substrate. Trenches extend vertically through the substrate thickness, creating multiple capacitance storage regions along the depth dimension. This vertical dimensionality multiplication significantly increases capacitance density near the dies compared to traditional planar configurations.
Solution Approach 2:
The patent embeds capacitor structures directly within the substrate volume by forming trenches and filling them with conductive materials and dielectric layers. The capacitor electrodes are nested within the substrate matrix, with conductive plugs extending through the substrate thickness and being wrapped by dielectric and conductive layers, creating a nested configuration that maximizes capacitance within the available volume.
2Quantity of substance
If trench capacitors are formed within substrate, then capacitance density increases and parasitic elements reduce, but manufacturing complexity increases
Solution Approach 1:
The capacitor formation process is segmented into distinct sequential steps: trench etching, conductive plug deposition, dielectric layer deposition, and additional conductive layer deposition. Each step uses specialized manufacturing equipment and processes, allowing for precise control and optimization of each individual step while maintaining overall process integration.
Solution Approach 2:
The trench capacitor structure serves multiple functions simultaneously: it provides high capacitance density for power delivery, acts as an RF capacitor for radio frequency operations, and integrates within the substrate without requiring separate discrete capacitor components. This multi-functionality reduces the overall component count and simplifies the final package assembly.
3Quantity of substance
If capacitor size is reduced laterally, then capacitance density near dies improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent compensates for reduced lateral dimensions by utilizing the vertical dimension through deep trench structures. The trenches extend through the substrate thickness, providing extended capacitance storage volume along the depth direction. This vertical extension maintains high capacitance density even when lateral footprint is minimized, reducing the impact of manufacturing precision requirements.
Solution Approach 2:
The patent employs atomic layer deposition (ALD) to precisely control the thickness and properties of dielectric and conductive layers within the trenches. ALD provides atomic-level precision in thin film deposition, enabling accurate control of layer thicknesses on the order of nanometers. This precise parameter control ensures consistent capacitor performance despite small lateral dimensions and tight tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides enhanced capacitance density and reduced parasitic elements, improving power delivery and RF/I/O performance while maintaining dimensional accuracy and stability, suitable for both power and RF applications in compact electronic devices.
Implementation Method 1
utilizing high-k dielectric materials
Implementation Method 2
advanced manufacturing techniques like atomic layer deposition
Data Source
Figure 1
Figure 2
Figure 3
AI summary
Embodiments herein relate to systems, apparatuses, or processes directed to electrically coupled trench capacitors within a substrate. The substrate may be part of an interposer, such as a glass interposer, where the trench capacitors deliver a high capacitance density close to one or more dies that are attached to a surface of the substrate. Portions of the trench capacitor may be a thin film capacitor at a surface of the substrate. The trenches extend from a first side of the substrate toward a second side of the substrate opposite the first side. Other embodiments may be described and/or claimed.