Optoelectronic Semiconductor Chip Trench Contact Design
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Solution Overview
Problem
Optoelectronic semiconductor chips face challenges in achieving high light extraction efficiency due to absorption losses at the semiconductor-contact interface, particularly because the generated light hits the contact at a steep angle, leading to reflection and absorption, which reduces the emitted radiation.
Innovation Solution
The semiconductor chip design features a second electrical contact located in a trench within the second semiconductor region, with a shallow distance to the active zone to minimize the angle of incidence, reducing absorption losses and maintaining low sheet resistance by keeping the transverse conducting layer thickness minimal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the second electrical contact is placed close to the active zone, then the angle of incidence is minimized and light extraction efficiency is improved, but the sheet resistance increases due to reduced transverse conducting layer thickness
Solution Approach 1:
The second electrical contact is positioned in a trench that extends vertically into the second semiconductor region, creating a three-dimensional configuration. This vertical dimension allows the contact to approach the active zone closely (minimizing the angle of incidence) while the trench structure provides lateral current distribution paths through the semiconductor material, thereby maintaining low sheet resistance despite the reduced transverse conducting layer thickness.
2Productivity
If the second electrical contact is located in a trench, then light extraction efficiency is enhanced by reducing absorption losses, but the device complexity increases
Solution Approach 1:
The second electrical contact is segmented into multiple contact regions distributed within the trench structure. This segmentation allows current to be injected at multiple points along the trench, improving current distribution and reducing sheet resistance while maintaining the light extraction benefits of the trench configuration. The segmented approach also simplifies the manufacturing process compared to a single complex contact structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances light extraction efficiency by reducing absorption losses and maintaining low operating voltage, allowing a larger proportion of generated radiation to be emitted while maintaining efficient current flow.
Implementation Method 1
In the semiconductor layer sequence there is an active zone for radiation generation. The active zone contains in particular a single quantum well structure, a multiple quantum well structure and/or at least one pn junction.
Implementation Method 2
The second electrical contact is at least partially located in a trench of the second semiconductor region... to minimize the angle of incidence, reducing absorption losses
Data Source
AI summary
Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.