Trench Diode Contact Layout for Lower Forward Voltage Loss
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing the forward-direction voltage and reverse recovery loss of diode portions due to limitations in the design of contact structures and dopant distribution, leading to suboptimal performance.
Innovation Solution
The semiconductor device incorporates a specific configuration with alternating first and second contact portions, interlayer dielectric portions, and a unique arrangement of trench and plug regions to adjust dopant distribution and reduce electric field strength, enhancing the forward-direction voltage and minimizing reverse recovery loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional contact structure with single contact portion is used, then the device complexity is low, but the forward-direction voltage and reverse recovery loss cannot be optimized
Solution Approach 1:
The contact structure is divided into multiple contact portions (first contact portion and second contact portion) with different conductivity types. The first contact portion has first conductivity type and the second contact portion has second conductivity type, allowing independent optimization of electrical characteristics for forward voltage and reverse recovery performance
Solution Approach 2:
Different regions of the contact structure are assigned different doping concentrations and conductivity types. The first contact portion region has first doping concentration and conductivity type, while the second contact portion region has second doping concentration and conductivity type, enabling localized optimization of electrical properties
2Loss of energy
If uniform dopant distribution is used, then the manufacturing process is simple, but the reverse recovery loss cannot be minimized
Solution Approach 1:
The dopant distribution is segmented into at least two different doping concentration regions. The first contact portion region has a first doping concentration while the second contact portion region has a second doping concentration, creating optimized charge carrier distribution for reduced reverse recovery loss
Solution Approach 2:
Different doping concentrations are applied to different spatial regions of the contact structure. The first contact portion region receives dopant at a first concentration and the second contact portion region receives dopant at a second concentration, enabling localized control of electrical characteristics
3Reliability
If alternating contact portions with different conductivity types are implemented, then the forward-direction voltage is improved, but the manufacturing complexity increases
Solution Approach 1:
The contact structure alternates between first contact portions with first conductivity type and second contact portions with second conductivity type. This segmentation creates favorable charge carrier distribution for minimizing reverse recovery loss while maintaining manufacturability through systematic patterning
Solution Approach 2:
The first contact portions and second contact portions are merged into a single integrated contact structure that combines multiple conductivity types. This unified structure achieves optimized electrical performance for both forward voltage and reverse recovery characteristics
Data Source
AI summary
Provided is a semiconductor device comprising a diode portion, comprising: a plurality of trench portions provided at a front surface of a semiconductor substrate; a drift region of a first conductivity type provided on the semiconductor substrate; an anode region of a second conductivity type provided above the drift region in the diode portion; a first plug region of the second conductivity type provided above the drift region in the diode portion, which has a doping concentration higher than a doping concentration of the anode region; a front surface side electrode provided above the semiconductor substrate; and an interlayer dielectric film provided above a mesa portion provided between the plurality of trench portions; wherein the anode region is connected to the front surface side electrode on side surfaces of the plurality of trench portions.