Trench Diode for ESD Robustness in Miniaturized Semiconductors
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Solution Overview
Problem
The challenge lies in shrinking the dimensions of diodes while maintaining their current carrying capability and robustness against electrostatic discharge, as semiconductor technology advances and demands for functionality remain unchanged.
Innovation Solution
The semiconductor device incorporates a diode with an anode and cathode region, where one region is partially arranged in a trench within the semiconductor body, allowing for increased trench depth and lateral current flow, which enhances conductivity and reduces path resistance, thereby improving the diode's ability to withstand electrostatic discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If diode dimensions are shrunk to match advancing semiconductor technology, then device integration density improves, but current carrying capability and ESD robustness deteriorate
Solution Approach 1:
The patent transitions the diode structure from a planar two-dimensional layout to a three-dimensional configuration by extending one of the diode regions into a trench that penetrates through the semiconductor substrate. This vertical extension into the third dimension increases the effective current carrying area and ESD robustness without increasing the lateral footprint, thereby resolving the contradiction between miniaturization and maintaining functionality.
Solution Approach 2:
The patent divides the semiconductor substrate into distinct regions by creating a trench that segments the continuous substrate into upper and lower portions. The diode region is positioned within this segmented trench structure, allowing independent optimization of the diode's current carrying path while maintaining compact lateral dimensions. This segmentation enables the diode to achieve enhanced ESD robustness through increased vertical current flow area.
2Volume of moving object
If diode dimensions are shrunk, then integration density improves, but current carrying capability deteriorates
Solution Approach 1:
The patent resolves the contradiction between reduced lateral dimensions and maintained current carrying capability by extending the diode structure vertically into a trench. This three-dimensional configuration increases the effective cross-sectional area available for current flow in the vertical direction, compensating for the reduced lateral footprint and enabling the miniaturized diode to sustain high current levels.
3Manufacturing precision
If trench depth is increased to enhance conductivity, then path resistance reduces, but device complexity increases
Solution Approach 1:
The patent employs trench segmentation to create distinct functional zones within the semiconductor device. The trench is configured with specific depth and width parameters that segment the current flow path into controlled regions, optimizing resistance characteristics while maintaining manufacturing feasibility through standardized trench formation processes.
Data Source
AI summary
A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench. The other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn junction. The semiconductor device further includes a conducting path through a sidewall of the first trench.