Trench Diode Integration for Semiconductor Overcurrent Detection
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Solution Overview
Problem
Existing semiconductor devices face challenges in accurately detecting overcurrent due to noise interference and require additional manufacturing steps for temperature sensing, leading to increased costs and dimensional variations in impurity regions.
Innovation Solution
A semiconductor device design that incorporates diodes within trenches in the semiconductor layer, allowing for precise exposure focus and reduced dimensional variations, with bidirectional Zener diodes and insulating films to enhance manufacturing efficiency and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a diode is formed on the front surface of the semiconductor substrate to detect temperature changes, then temperature detection capability is improved, but manufacturing process complexity increases and manufacturing cost increases
Solution Approach 1:
The patent combines the temperature detection diode with the existing trench structure used for other semiconductor components. The diode is formed within the same trench that is already part of the device architecture, merging the temperature sensing function with the structural framework rather than adding a separate front-surface component.
Solution Approach 2:
The trench structure serves multiple functions: it provides mechanical support, electrical isolation, and now also houses the temperature detection diode. This multi-functional use of the trench eliminates the need for dedicated separate structures for temperature sensing.
2Measurement precision
If a diode is formed on the front surface of the semiconductor substrate, then temperature detection capability is improved, but manufacturing cost increases
Solution Approach 1:
The patent combines the temperature detection diode with the existing trench structure used for other semiconductor components. The diode is formed within the same trench that is already part of the device architecture, merging the temperature sensing function with the structural framework rather than adding a separate front-surface component.
Solution Approach 2:
The trench structure serves multiple functions: it provides mechanical support, electrical isolation, and now also houses the temperature detection diode. This multi-functional use of the trench eliminates the need for dedicated separate structures for temperature sensing.
3Measurement precision
If a diode is formed on the front surface of the semiconductor substrate, then temperature detection capability is improved, but dimensional variations in the impurity region increase
Solution Approach 1:
The patent moves the diode formation from the front surface (two-dimensional plane) into the vertical dimension by placing it within the trench. This dimensional transition allows the diode to be formed at a depth where the substrate surface is flat, eliminating focus issues during exposure while still providing temperature detection capability.
Data Source
AI summary
A semiconductor device includes a semiconductor layer, a transistor cell portion, formed in the semiconductor layer, a first trench, formed in the semiconductor layer, a diode, electrically separated from the transistor cell portion and having a first conductivity type portion and a second conductivity type portion disposed inside the first trench, a second trench, formed in the semiconductor layer, and a bidirectional Zener diode, electrically connected to the transistor cell portion and having a pair of first conductivity type portions, disposed inside the second trench, and at least one second conductivity type portion, formed between the pair of first conductivity type portion.