Trench Electrode Gate Contact Isolation Structure
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Solution Overview
Problem
Scaling semiconductor devices to smaller dimensions increases manufacturing complexity and costs due to challenging contacts to trench electrode structures in semiconductor devices like IGBTs and MOSFETs.
Innovation Solution
A semiconductor device design featuring trench electrode structures with a gate contact area where the gate contact extends up to or below the main surface, accompanied by an isolation structure between the gate contact and the semiconductor body, reducing the depth-to-width ratio of the contact and simplifying the contact architecture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate contact extends deep into the trench electrode structure to achieve electrical connection, then the contact reliability is improved, but the depth-to-width ratio increases leading to manufacturing complexity and cost increase
Solution Approach 1:
An isolation structure is introduced as an intermediary element positioned between the gate contact and the semiconductor body. This isolation structure extends laterally beyond the trench electrode structure, creating an intermediate platform that allows the gate contact to achieve electrical connection with the gate electrode while avoiding direct deep penetration into the trench, thereby reducing the depth-to-width ratio and simplifying the contact architecture.
2Manufacturing precision
If the gate contact area is positioned to optimize electrical connection, then the contact quality is improved, but the manufacturing complexity and costs increase due to challenging contacts
Solution Approach 1:
The isolation structure extends in a lateral dimension beyond the trench electrode structure, creating an extended platform that allows the gate contact to be positioned optimally for electrical connection without requiring complex deep vertical contacts. This dimensional extension provides manufacturing flexibility and simplifies the contact formation process.
Data Source
AI summary
A semiconductor device is proposed. The semiconductor device includes a semiconductor body including a first main surface. A plurality of trench electrode structures extend in parallel along a first lateral direction. A first one of the plurality of trench electrode structures includes a gate electrode. A gate contact is electrically connected to the gate electrode in a gate contact area. The gate contact area is arranged in a first section along the first lateral direction. An isolation structure is arranged between the gate contact and the semiconductor body in the gate contact area. A bottom side of the isolation structure is arranged between a bottom side of the first one of the plurality of trench electrode structures and the first main surface along a vertical direction. The gate contact extends up to or below the first main surface along the vertical direction.