Trench Embedding via Aminosilane Seed Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Miniaturization of trenches in semiconductor integrated circuits poses challenges in forming expandable films and oxidation barrier films, making it difficult to prevent gaps and oxidation of the silicon substrate.
Innovation Solution
A method involving the formation of an oxidation barrier film and an expandable film on the trench, using aminosilane-based gases to create seed layers and silicon nitride films, followed by embedding a contracting material that expands to offset contraction, thereby preventing gaps and oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a trench is miniaturized to increase integration density, then productivity and device capacity improve, but it becomes difficult or impossible to form both an oxidization barrier film and an expandable film on the trench
Solution Approach 1:
The invention changes the chemical parameters of the film formation process by using aminosilane-based gases (such as SiH3NH2 or SiH2NHCH3) instead of conventional silane gases. This parameter change enables the formation of silicon nitride films with appropriate properties on miniaturized trenches, allowing both oxidization barrier and expandable films to be successfully formed even when trench dimensions are reduced for higher integration density.
2Reliability
If an oxidization barrier film is formed on the trench to prevent substrate oxidation, then reliability improves, but the process complexity increases due to the need for multiple film formation steps
Solution Approach 1:
The silicon nitride film formed using aminosilane-based gas serves multiple functions simultaneously: it acts as an oxidization barrier to prevent substrate oxidation, provides a suitable base for subsequent expandable film formation, and maintains compatibility with miniaturized trench structures. This multi-functionality reduces the need for separate specialized films and simplifies the overall process complexity while maintaining reliability.
3Manufacturing precision
If an expandable film is formed to offset PHPS contraction, then manufacturing precision improves by preventing gaps, but the device complexity increases due to additional film layers
Solution Approach 1:
The invention merges the functions of the oxidization barrier film and the expandable film into a single silicon nitride film formed by aminosilane-based CVD. This combined film provides both oxidation protection and gap prevention through its expandable properties, thereby maintaining manufacturing precision while reducing device complexity by eliminating the need for separate film layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of films on miniaturized trenches, preventing gap formation and oxidation of the silicon substrate, ensuring reliable device operation in semiconductor integrated circuits.
Implementation Method 1
forming a first seed layer on the trench by supplying an aminosilane-based gas to the semiconductor substrate on which the trench is formed; and forming a silicon nitride film on the first seed layer
Implementation Method 2
embedding an embedding material that contracts by being fired on the trench where the oxidization barrier film and the expandable film are formed; and firing the embedding material
Data Source
AI summary
A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer.