Trench Field Effect Transistor with Intersecting Connection Regions
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Solution Overview
Problem
Field effect transistors with trench-type gate electrodes face limitations in current density and breakdown voltage due to the concentration of current in specific inter-trench semiconductor regions, leading to reduced conductivity and increased on-resistance.
Innovation Solution
The design incorporates p-type connection regions extending in intersecting directions, field relaxation regions arranged below the trenches, and a semiconductor substrate structure with source, contact, and body regions, allowing for stabilized potential and reduced current concentration by spreading the depletion layer, thereby enhancing breakdown voltage and current capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If trench-type gate electrodes are used to increase breakdown voltage, then breakdown voltage is improved, but current density decreases due to current concentration in specific inter-trench semiconductor regions
Solution Approach 1:
The patent introduces connection regions with different impurity concentrations (first connection regions with higher concentration, second connection regions with lower concentration) to create local quality variations. This allows different regions to serve different functions: high-concentration regions provide low-resistance current paths, while low-concentration regions maintain breakdown voltage, thereby resolving the contradiction between conductivity and breakdown voltage.
Solution Approach 2:
The patent segments the inter-trench semiconductor region into multiple body regions separated by connection regions. This segmentation distributes the current flow across multiple paths rather than concentrating it in a single region, improving current density while maintaining the trench-type gate structure for high breakdown voltage.
2Device complexity
If current is concentrated in specific inter-trench semiconductor regions to simplify structure, then device complexity is reduced, but on-resistance increases and current capacity decreases
Solution Approach 1:
The patent divides the semiconductor substrate into multiple body regions (first, second, third body regions) separated by connection regions. This segmentation creates multiple current paths that reduce on-resistance and improve current capacity while maintaining a relatively simple overall structure based on the trench-type gate electrode configuration.
Data Source
AI summary
A field effect transistor includes a semiconductor substrate and multiple trenches disposed at a top surface of the semiconductor substrate. The trenches extend in a first direction at the top surface of the semiconductor substrate, and are disposed to be spaced apart in a direction perpendicular to the first direction. Connection regions are disposed below body regions. The connection regions extend in a second direction intersecting the first direction in a top view of the semiconductor substrate, and are spaced apart in a direction perpendicular to the second direction. Field relaxation regions are disposed below the connection regions and the trenches. The field relaxation regions extend in a third direction intersecting the first direction and the second direction in the top view of the semiconductor substrate, and are spaced apart in a direction perpendicular to the third direction.