Trench Formation in Thin Film Transistor Array Panels
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Solution Overview
Problem
Conventional methods for forming trenches in thin film transistor array panels using metal masks result in residual particles and incomplete etching, leading to residual films at the bottom of the trenches, which impede the formation of low-resistive copper wires and reduce pixel integration and image processing speed.
Innovation Solution
A method involving the use of a first insulating layer, a patterned metal layer as a mask for dry-etching with a main etching gas and an auxiliary etching gas like argon, followed by wet-etching to remove residual particles and films, ensuring complete etching to the bottom of the trench and subsequent chemical mechanical polishing for forming metal wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a metal mask is used for etching to form a trench, then the etching process can be performed, but residual particles are generated in the trench
Solution Approach 1:
The patent extracts and removes the harmful residual particles generated during metal mask etching through a specific cleaning process. The cleaning solution is applied to dissolve and remove the residual particles from the trench, thereby resolving the contradiction between maintaining etching capability and ensuring trench cleanliness.
Solution Approach 2:
The patent converts the harmful residual particles into a removable substance by using a cleaning solution that specifically dissolves these particles. The residual particles, which are normally harmful, become easily removable through chemical dissolution, transforming the problem into a solvable cleaning step.
2Productivity
If a metal mask is used for etching to form a trench, then the etching process can be performed, but a residual film remains at the bottom of the trench
Solution Approach 1:
The patent extracts and removes the residual film from the trench bottom through a targeted cleaning process. The cleaning solution penetrates to the trench bottom and dissolves the residual film, ensuring complete removal while maintaining the etching process capability.
Solution Approach 2:
The patent converts the harmful residual film at the trench bottom into a removable substance through chemical dissolution. The cleaning solution transforms the adhered residual film into a soluble form that can be completely removed, turning a persistent contamination problem into an effective cleaning step.
3Loss of time
If the etching is not performed to the bottom of the trench, then the process can be stopped early, but a residual film remains that impedes metal wire formation
Solution Approach 1:
The patent applies a preliminary cleaning action after etching to remove residual films before metal wire formation. By performing the cleaning step immediately after etching, the residual film is removed before it can interfere with subsequent metal deposition, ensuring complete trench bottom cleanliness without extending the etching time itself.
4Ease of manufacture
If conventional photo etching is used to form the trench, then the process can be performed, but selectivity is significantly decreased
Solution Approach 1:
The patent replaces the conventional photo etching process with a metal mask-based etching process. This substitution eliminates the need for photoresist coating and development steps, simplifying the manufacturing process while simultaneously improving etching selectivity through the inherent properties of the metal mask material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the etch rate, reduces residual films and particles, and enables the formation of low-resistive metal wires, enhancing pixel integration and image processing speed in thin film transistor array panels.
Implementation Method 1
forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; The dry-etching is performed using a main etching gas and a first auxiliary etching gas
Implementation Method 2
wet-etching the substrate
Implementation Method 3
forming a metal wire in the trench by polishing the second metal layer through a chemical mechanical polishing process
Data Source
AI summary
The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.