Trench-Gate Semiconductor Layout for Breakdown Voltage Uniformity
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Solution Overview
Problem
Existing semiconductor devices with trench gates face issues of unintended electric field concentration and decreased breakdown voltage due to non-uniformity in the depth of connecting regions between the cell and boundary sections, leading to inefficiencies in high breakdown-voltage structures.
Innovation Solution
The semiconductor device incorporates multiple connecting regions of a second conductivity type, arranged in a uniform pattern between bottom and body regions within the semiconductor layer, ensuring uniformity in shape and preventing electric field concentration by extending the trench gate into the drift region between these regions, thereby maintaining high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If connecting regions are formed between cell section and boundary section, then electrical connection is improved, but non-uniform depth causes electric field concentration and reduces breakdown voltage
Solution Approach 1:
The connecting regions are segmented into multiple discrete regions arranged in a pattern between the cell section and boundary section, rather than forming a continuous structure. This segmentation allows each connecting region to be precisely controlled at uniform depth, preventing electric field concentration while maintaining electrical connection functionality.
Solution Approach 2:
The connecting regions are strategically positioned at specific locations between the cell section and boundary section, with the drift region intentionally disposed between these connecting regions. This local quality approach ensures that the connecting regions provide necessary electrical connection while the drift region maintains the electric field distribution and breakdown voltage characteristics.
2Reliability
If connecting regions are arranged to connect bottom regions and body region, then electrical connectivity is enhanced, but non-uniform arrangement causes electric field concentration
Solution Approach 1:
The connecting regions are divided into multiple discrete segments arranged in a regular pattern, with the drift region positioned between them. This segmentation creates uniform spacing and depth across all connecting regions, ensuring stable composition and preventing electric field concentration while maintaining electrical connectivity between bottom regions and body region.
Solution Approach 2:
The connecting regions are designed with homogeneous characteristics - uniform depth, uniform spacing, and consistent dimensions - throughout the boundary section. This homogeneity, combined with the drift region disposed between them, ensures uniform electric field distribution and stable composition, preventing the electric field concentration that would occur with non-uniform arrangements.
Data Source
AI summary
A semiconductor device includes multiple connecting regions having a second conductivity type and disposed in a cell section and a boundary section. The connecting regions are located between bottom regions and a body region in a thickness direction of a semiconductor layer, in contact with the bottom regions and the body region, and repeatedly arranged at intervals at least in one direction so that a drift region is disposed between the connecting regions.