Trench Gate Electrode Corner Geometry for Stable Gate-Drain Charge

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Solution Overview

Problem

Semiconductor devices with trench gate structures face challenges in maintaining consistent gate-drain charge characteristics, leading to fluctuations in on-resistance and switching losses due to variations in the position of the gate electrode's corner portions, which affect the angle between the gate electrode's side surfaces and bottom portion.

Innovation Solution

A semiconductor device design featuring a gate electrode with specific corner angles and insulating structures, where the angle between the first and second straight lines passing through the corner portions is not more than 60°, and a manufacturing method involving trench and mesa formation, reactive ion etching, and chemical vapor deposition to maintain consistent gate-drain charge characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the gate electrode corner portion position is not precisely controlled, then manufacturing complexity is reduced, but gate-drain charge characteristics become inconsistent leading to on-resistance fluctuations

Engineering Contradiction:
Improvegate-drain charge characteristics consistencyVSAvoidcorner angle control requirement
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent specifies a particular angular range (not more than 60°) for the corner portions of the gate electrode. By controlling this geometric parameter within a specific range, the invention ensures consistent gate-drain charge characteristics while avoiding the need for extremely precise position control, thus resolving the contradiction between manufacturing precision and device complexity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent establishes the corner angle constraint as a design parameter during the planning stage. By predetermined the angular range of not more than 60° for the corner portions, the invention prevents gate-drain charge fluctuations before they occur during manufacturing, rather than requiring complex real-time adjustments

Inventive Principle:
Principle #10Preliminary action

2Loss of energy

If the angle between gate electrode side surfaces and bottom portion is not controlled, then manufacturing process is simpler, but switching losses increase due to gate-drain charge fluctuations

Engineering Contradiction:
Improveswitching lossesVSAvoidangle constraint implementation
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent directly controls the angular parameter of the gate electrode corner portions (not more than 60°) to optimize the electric field distribution and reduce gate-drain charge fluctuations. This parameter control effectively reduces switching losses while maintaining reasonable manufacturing complexity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies the same angular constraint (not more than 60°) to both corner portions of the gate electrode, creating symmetry in the design. This uniform approach simplifies the manufacturing process while effectively suppressing gate-drain charge fluctuations and reducing switching losses

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively suppresses gate-drain charge fluctuations, ensuring on-resistance stability and reducing switching losses by maintaining the angle between the gate electrode's side surfaces and bottom portion within a specific range, thereby optimizing semiconductor device performance.

Implementation Method 1

a manufacturing method involving trench and mesa formation, reactive ion etching

Methodology Applied
Scientific EffectReactive ion etching:

Implementation Method 2

chemical vapor deposition to maintain consistent gate-drain charge characteristics

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20250022951A1Semiconductor device and method for manufacturing semiconductor device
Publication Date: 2025.01.16 KK TOSHIBA
  • US20250022951A1 patent drawing
  • US20250022951A1 patent drawing
  • US20250022951A1 patent drawing

AI summary

The gate electrode includes a first side surface portion facing a region of a side surface of a mesa part, a second side surface portion positioned at a side opposite to the first side surface portion, a bottom portion oblique to the first and second side surface portions, the bottom portion connecting the first side surface portion and the second side surface portion, a first corner portion positioned between the first side surface portion and the bottom portion, and a second corner portion positioned between the second side surface portion and the bottom portion. An angle between a first straight line and a second straight line is not more than 60°. The first straight line is a straight line extending in a first direction and passing through the first corner portion. The second straight line is a straight line passing through the first and second corner portions.