Trench Gate Semiconductor Structure With Self-Aligned Current Dispersion
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Solution Overview
Problem
Existing semiconductor devices with trench gate structures face issues such as dielectric breakdown due to electrical field concentration at the bottom portion of the trench gate structure, positional misalignment leading to characteristic fluctuations, and increased manufacturing complexity and cost.
Innovation Solution
A semiconductor device with a vertical semiconductor element including a trench gate structure, comprising a trench gate structure, comprising a first semiconductor layer, a second semiconductor layer, a deep layer, a current dispersion layer, a base region, a high-concentration region, a trench gate structure, an interlayer insulation film, a first electrode, and a second electrode, where the current dispersion layer is formed in self-aligned manner with the trench gate structure to suppress misalignment and simplify manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the current dispersion layer is formed using conventional alignment methods, then the manufacturing process is simpler, but positional misalignment occurs leading to characteristic fluctuations
Solution Approach 1:
The patent applies preliminary action by forming the current dispersion layer before forming the trench gate structure. This sequence allows the current dispersion layer to serve as a reference for subsequent alignment, ensuring precise positioning of the trench gate structure relative to the current dispersion layer without requiring complex alignment processes during later manufacturing stages.
Solution Approach 2:
The patent implements self-service through self-aligned formation where the current dispersion layer automatically defines the position for the trench gate structure. The manufacturing process is designed so that the current dispersion layer itself serves as the alignment reference, eliminating the need for separate alignment markings or complex external alignment procedures.
2Reliability
If the trench gate structure is formed without considering electrical field concentration, then the manufacturing process is simpler, but dielectric breakdown occurs at the bottom portion of the trench gate structure
Solution Approach 1:
The patent applies local quality by creating a non-uniform current dispersion layer with varying impurity concentrations at different locations. The current dispersion layer has higher impurity concentration near the trench gate structure bottom where electrical field concentration occurs, and lower concentration further away. This localized variation in material properties specifically addresses the electrical field concentration problem at critical locations without complicating the overall structure.
Solution Approach 2:
The patent implements parameter changes by varying the impurity concentration parameter within the current dispersion layer. The impurity concentration is changed as a function of position, with higher concentrations near the trench gate structure bottom to suppress electrical field concentration and prevent dielectric breakdown, while maintaining lower concentrations in other regions to avoid unnecessary complexity.
3Ease of manufacture
If multiple separate processes are used to form the current dispersion layer and trench gate structure, then each process can be optimized independently, but manufacturing complexity and cost increase
Solution Approach 1:
The patent applies merging by combining the formation of the current dispersion layer and the trench gate structure into an integrated manufacturing sequence. The current dispersion layer formation process is merged with the trench gate structure formation process, where the current dispersion layer serves as both a functional component and an alignment reference for the trench gate structure, reducing the number of separate processes needed.
Solution Approach 2:
The patent implements universality by making the current dispersion layer serve multiple functions: it provides current dispersion functionality and simultaneously serves as an alignment reference for the trench gate structure. This multi-functionality eliminates the need for separate alignment reference structures, simplifying the overall manufacturing process while maintaining high alignment precision.
Data Source
AI summary
A semiconductor device includes a vertical semiconductor element having a deep layer, a current dispersion layer, a base region, a high-concentration region, and a trench gate structure. The deep layer has multiple sections being apart to each other in one direction. The current dispersion layer is between adjacent two of the sections of the deep layer. The high-concentration region is on a portion of the base region. The trench gate structure includes a gate trench, a gate insulation film and a gate electrode. The current dispersion layer is at a bottom of the trench gate structure, and has an ion-implanted layer extending from a bottom portion of the gate trench to a bottom portion of the deep layer or a location below the bottom portion of the deep layer.