Trench Gate Semiconductor Layout for Self-Aligned Field Dispersion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with trench gate structures face issues of dielectric breakdown due to electrical field concentration at the bottom portion of the trench gate structure, leading to positional misalignment and increased manufacturing complexity and cost.
Innovation Solution
A semiconductor device with a vertical semiconductor element featuring a trench gate structure and a current dispersion layer, where the current dispersion layer is formed in a self-aligned manner using the same mask as the trench gate structure, eliminating positional misalignment and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate masks are used for forming the trench gate structure and the current dispersion layer, then both structures can be formed independently, but positional misalignment occurs between them
Solution Approach 1:
The patent combines the formation of the trench gate structure and the current dispersion layer into a single mask process. The mask is designed with openings that simultaneously define both the trench gate pattern and the current dispersion layer pattern, eliminating the need for separate masking steps and ensuring perfect positional alignment between the two structures.
Solution Approach 2:
The mask structure is designed to automatically ensure proper alignment through its geometric configuration. The openings in the mask are positioned such that when the trench gate structure is formed, the current dispersion layer is automatically aligned relative to it without requiring additional alignment steps or complex positioning mechanisms.
2Ease of manufacture
If multiple separate manufacturing steps are used to form the trench gate structure and current dispersion layer, then each structure can be optimized independently, but the manufacturing process becomes more complex and costly
Solution Approach 1:
The patent merges the formation of the trench gate structure and current dispersion layer into a single integrated process step using one mask. This simplifies the manufacturing process by reducing the number of steps and lowering costs, while the mask design ensures that both structures maintain their required geometric relationships and optimizations.
3Reliability
If the current dispersion layer is not precisely aligned with the trench gate structure, then manufacturing is simpler, but dielectric breakdown occurs due to electrical field concentration
Solution Approach 1:
The mask is designed with built-in geometric relationships that automatically ensure the current dispersion layer is precisely aligned with the trench gate structure. The opening positions and dimensions in the mask inherently provide the correct alignment without requiring complex external control mechanisms or additional alignment steps.
Solution Approach 2:
By forming both the trench gate structure and current dispersion layer in a single mask process, the patent ensures that their relative positions are determined by the mask geometry itself, which eliminates misalignment issues that would otherwise require complex control mechanisms to prevent dielectric breakdown.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design suppresses dielectric breakdown and reduces characteristic fluctuations, simplifies manufacturing, and lowers costs by ensuring precise alignment of the trench gate structure with the current dispersion layer.
Implementation Method 1
the current dispersion layer includes an ion-implanted layer having a thickness from a bottom portion of the gate trench to a bottom portion of the deep layer or a position below the bottom portion of the deep layer
Data Source
AI summary
A semiconductor device includes a vertical semiconductor element having a deep layer, a current dispersion layer, a base region, a high-concentration region, and a trench gate structure. The deep layer has multiple sections being apart to each other in one direction. The current dispersion layer is between adjacent two of the sections of the deep layer. The high-concentration region is on a portion of the base region. The trench gate structure includes a gate trench, a gate insulation film and a gate electrode. The current dispersion layer is at a bottom of the trench gate structure, and has an ion-implanted layer extending from a bottom portion of the gate trench to a bottom portion of the deep layer or a location below the bottom portion of the deep layer.