Trench Gate Field Plate Segmentation for Semiconductor Reliability
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Solution Overview
Problem
The reliability of semiconductor devices with trench gate structures is compromised due to nonuniformity in manufacturing processes, leading to defects and reduced performance in ON-resistance and OFF breakdown voltage.
Innovation Solution
A semiconductor device design that includes a trench gate structure with a field plate electrode, where the field plate electrode is positioned between the gate electrode and the drain electrode, and is electrically isolated from the semiconductor part by insulating films, enhancing the structural integrity and reducing defects caused by manufacturing nonuniformities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a field plate electrode is added to the trench gate structure, then ON-resistance is reduced and OFF breakdown voltage is increased, but reliability decreases due to defects caused by nonuniformity in manufacturing processes
Solution Approach 1:
The field plate electrode is divided into multiple segments (first field plate electrode and second field plate electrode) separated by an insulating film. This segmentation allows each segment to be independently formed and positioned, reducing the impact of manufacturing nonuniformity on the overall structure while maintaining the electrical field control function.
Solution Approach 2:
An insulating film is introduced as an intermediary between the field plate electrode segments and between the electrode and semiconductor substrate. This intermediary layer compensates for manufacturing variations by providing a controlled dielectric barrier, ensuring consistent electrical isolation and reducing defect propagation.
2Reliability
If a field plate electrode is positioned between the gate electrode and drain electrode, then ON-resistance is reduced, but device complexity increases
Solution Approach 1:
The field plate electrode structure serves multiple functions: it controls the electrical field distribution to reduce ON-resistance, provides voltage blocking to increase OFF breakdown voltage, and the segmented design with insulating films simplifies the manufacturing process by enabling standard deposition techniques. This multi-functionality justifies the increased structural complexity.
Solution Approach 2:
The field plate electrode segments are nested within the trench structure, with insulating films positioned between them and between them and the semiconductor substrate. This nested arrangement integrates multiple functional layers within the existing trench geometry, managing complexity through hierarchical organization rather than adding separate external components.
Data Source
AI summary
A semiconductor device includes a semiconductor part between first and second electrodes, and also includes a control electrode and a field plate between the semiconductor part and the second electrode. The control electrode is positioned between the field plate and the second electrode. The control electrode is electrically isolated from the semiconductor part by a first insulating film including first to third portions and from the second electrode by a second insulating film including fourth and fifth portions. The first portion is provided between the semiconductor part and the field plate electrode. The second portion is provided between the semiconductor part and the control electrode. The third portion is provided between the field plate electrode and the control electrode, and extends into the control electrode. The fourth portion is provided between the second and third portions. The fifth portion is provided between the third portion and the second electrode.