Trench Gate IGBT With Narrow Bottom Interspaces
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Solution Overview
Problem
Trench-gate IGBTs face challenges in reducing on-state voltage and power loss, which are essential characteristics for high-performance applications in motor vehicles and industrial equipment, as they require further improvements in electron-supplying capacity.
Innovation Solution
The design features trench gates with narrower interspaces between adjacent bottom portions, allowing for increased electron supply by accumulating positive holes, thereby reducing impedance and power loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional trench-gate IGBT structure is used, then basic power semiconductor functionality is achieved, but on-state voltage and power loss cannot be sufficiently reduced
Solution Approach 1:
The patent applies local quality by creating a non-uniform interspace configuration where specific regions between adjacent trench gates have different widths. The first interspace is designed to be narrower than the second interspace, optimizing the local electric field distribution and charge accumulation characteristics in different regions to reduce on-state voltage and power loss while maintaining manageable structural complexity
Solution Approach 2:
The patent employs parameter changes by varying the geometric parameters of the trench gate interspaces. Specifically, the width of interspaces between adjacent trench gates is deliberately differentiated, with the first interspace having a smaller width than the second interspace. This parameter variation optimizes electron supply capacity and reduces power loss without significantly increasing device complexity
2Quantity of substance
If trench gate interspaces are made narrower to increase electron supply, then electron-supplying capacity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating a non-uniform interspace configuration where specific regions between adjacent trench gates have different widths. The first interspace is designed to be narrower than the second interspace, optimizing the local electric field distribution and charge accumulation characteristics in different regions to reduce on-state voltage and power loss while maintaining manageable structural complexity
Solution Approach 2:
The patent applies partial action by selectively narrowing only the first interspace between adjacent trench gates while leaving the second interspace wider. This partial modification optimizes electron supply capacity in the critical region without requiring uniform high-precision fabrication across all interspaces, thereby reducing the overall manufacturing precision burden
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces on-state voltage and power loss in IGBTs, enhancing their performance and electron-supplying capacity compared to conventional devices.
Implementation Method 1
interspaces, located in the first-conductivity-type first semiconductor layer, between respective bottom portions of predetermined adjacent trench gates are narrower than any other bottom-portion interspace
Data Source
AI summary
A manufacturing method is provided for a power semiconductor device that enables reducing its on-state voltage and power loss. The semiconductor device includes a set of L-shaped trench gates 3 each formed, from the top-side surface of a p base layer 2, perpendicularly with respect to a first main surface of an n− layer 1, to reach into a location of the n− layer 1. At the lower ends of each of the trench gates 3, bottom portions 3d are provided to unilaterally extend a predetermined length in one direction parallel to the first main surface of the n− layer 1. In addition, the extending end of one of the bottom portions 3d opposes that of the other bottom portion, on the extending side of the bottom portions 3d, and the interspace between each pair of adjacent bottom portions 3d is set narrower than any other interspace between the trench-gate parts that are perpendicularly formed with respect to the first main surface of the n− layer 1.