Trench-Gate Semiconductor Layout With Integrated Gate Resistance
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Solution Overview
Problem
Conventional semiconductor devices face challenges in arranging gate resistors inside the device without increasing the number of manufacturing steps, particularly when forming on the top surface of a substrate with an insulating film.
Innovation Solution
A semiconductor device configuration that includes a drift layer, base region, main region, gate electrode, gate runner, gate pad, and resistance layer, with the resistance layer buried in a trench extending across both ends of the active part with an insulating film, facilitating electrical connection between the gate pad and gate runner, and a method for manufacturing this device that forms these structures to integrate gate resistance without additional steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If gate resistors are arranged inside the semiconductor device by forming on the top surface with insulating film, then the device integration is improved, but the number of manufacturing steps increases
Solution Approach 1:
The patent merges the gate resistor formation process with the existing gate electrode manufacturing process. Both the gate electrode and gate resistor are formed simultaneously by filling conductive material into respective trenches (gate trench and resistance trench) that are created during the same fabrication sequence, eliminating the need for separate resistor formation steps.
Solution Approach 2:
The conductive material filling step serves multiple functions: it forms both the gate electrode in the gate trench and the gate resistor in the resistance trench. This multi-functional approach allows integration of resistance elements without adding dedicated manufacturing steps for resistor formation.
2Device complexity
If conventional trench-gate structure is used, then the device structure is simplified, but gate resistors cannot be easily arranged inside the device
Solution Approach 1:
The patent segments the trench structure into two distinct types: gate trenches for holding gate electrodes and resistance trenches for holding gate resistors. Both trench types extend across the active region but are positioned and configured differently, allowing simultaneous formation of functional gate structures and integrated resistance elements within the same device footprint.
Solution Approach 2:
The patent utilizes the horizontal planar dimension by placing resistance trenches adjacent to gate trenches rather than stacking them vertically. This lateral arrangement within the same epitaxial layer allows both gate electrodes and gate resistors to coexist without increasing device thickness or requiring additional vertical layers.
Data Source
AI summary
A semiconductor device includes: a drift layer; a base region provided on the drift layer; a main region provided on the drift layer; a gate electrode provided on the drift layer and buried in a gate trench extending in one direction across both ends of an active part with a gate insulating film interposed; a gate runner provided on an outer circumferential side of the active part so as to be electrically connected to the gate electrode; a gate pad provided on an inner side of the gate runner; and a resistance layer provided on the drift layer and buried in a trench for resistance extending in the one direction across the both ends of the active part with an insulating film interposed so as to be electrically connected between the gate pad and the gate runner.