Trench Gate Electrode Segmentation for Low Resistance
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to increased gate resistance and ohmic losses due to narrowed conductive features, compromising device performance, especially at high current densities.
Innovation Solution
A semiconductor device design featuring a gate electrode within a trench, electrically insulated by dielectric layers, with a conductor having a higher conductivity than the gate electrode, positioned between dielectric contact spacers to reduce gate resistance and enhance switching speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the size of transistors is reduced for miniaturization, then device density is improved, but gate resistance increases and device performance deteriorates
Solution Approach 1:
The gate electrode is divided into two separate conductive regions (first conductor and second conductor) that are electrically isolated from each other by a dielectric layer. This segmentation allows each conductor to be independently optimized and connected to different potential sources, enabling the gate to function while maintaining lower resistance paths through the distributed structure.
Solution Approach 2:
The gate electrode structure transitions from a traditional single-layer planar gate to a three-dimensional segmented structure with conductors positioned at different vertical levels (first conductor in first region, second conductor in second region). This dimensional change allows for increased effective gate area without increasing the planar footprint, thereby improving density while maintaining performance.
2Length of moving object
If conductive features such as gate electrodes are narrowed to enable miniaturization, then device size is reduced, but gate resistance increases and ohmic losses increase
Solution Approach 1:
The gate electrode is segmented into multiple conductive regions (first and second conductors) that can be independently designed with optimal width and positioning. This segmentation allows the total gate function to be distributed across multiple narrower conductors rather than requiring a single wide conductor, reducing ohmic losses while maintaining the necessary gate control function.
Solution Approach 2:
Different conductive regions of the gate electrode can have different local properties (width, material, doping concentration) optimized for their specific functional requirements. The first conductor in the first region and the second conductor in the second region can be tailored to minimize resistance in their respective locations, thereby reducing overall ohmic losses.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate comprising a main surface and a gate electrode in a trench between neighboring semiconductor mesas. The gate electrode is electrically insulated from the neighboring semiconductor mesas by a dielectric layer. The semiconductor device further includes a conductor arranged, at least partially, between neighboring dielectric contact spacers. The conductor has a conductivity greater than a conductivity of the gate electrode. An interface between the conductor and the gate electrode extends along the gate electrode.