Trench Gate Semiconductor Device for Low On-Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Insulated gate bipolar transistors (IGBTs) face a trade-off between breakdown voltage and on-voltage, with existing solutions attempting to reduce on-voltage while maintaining high breakdown voltage, often requiring complex structures like carrier accumulation layers that increase production complexity and costs.
Innovation Solution
A trench gate type semiconductor device with grooves of specific dimensions and configurations, including a wide groove width and strategically placed electrodes, enhances hole accumulation and conductivity modulation without the need for a carrier accumulation layer, thereby reducing on-voltage while maintaining high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a carrier accumulation layer is arranged between the base region and the drift region to reduce on-voltage, then the on-voltage decreases, but the device structure becomes more complex and production costs increase
Solution Approach 1:
The patent extracts and eliminates the carrier accumulation layer from the device structure, replacing it with a simplified trench gate design. The groove structure with insulation film and electrode configuration achieves the same hole accumulation effect without requiring the additional n-type layer, thereby reducing structural complexity while maintaining low on-voltage performance
Solution Approach 2:
The patent changes the geometric parameters of the groove structure, specifically setting the groove width to be equal to or larger than the groove depth. This parameter change enables the groove to effectively accumulate holes through its geometry alone, replacing the need for the carrier accumulation layer and achieving the desired on-voltage reduction through dimensional optimization rather than additional structural elements
2Quantity of substance
If the groove width is increased to enhance hole accumulation, then hole accumulation improves, but the breakdown voltage may be affected
Solution Approach 1:
The patent applies local quality by creating different functional zones within the groove structure. The groove width is locally increased at specific positions to enhance hole accumulation in the drift region, while the insulation film and electrode configuration maintain appropriate electric field distribution to preserve breakdown voltage characteristics. This localized structural optimization achieves both goals simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device effectively reduces on-voltage through enhanced hole accumulation and conductivity modulation, improving switching performance and reliability while avoiding the complexity of carrier accumulation layers, thus achieving a better trade-off between breakdown and on-voltage.
Implementation Method 1
a control electrode arranged on a region of the insulation film at a side surface of the groove where the insulation film faces the third semiconductor region, a bottom electrode arranged on the insulation film at the bottom surface of the groove and spaced from the control electrode
Data Source
AI summary
A semiconductor device is disclosed that comprises semiconductor regions and an insulating film. A groove extends from a top surface of a semiconductor region and reaching a semiconductor region. In plan view, a body of a bottom electrode is formed in a strip form, and extends in an extending direction of the groove, and the connection portion extends in a depth direction of the groove and is connected to an end of the body in the extending direction of the body. The body of the bottom electrode is arranged in the groove, and the connection portion of the bottom electrode is arranged in the connection groove. In plan view, a length of the groove in the extending direction of the groove is larger than a width of the groove, and the width of the groove is larger than a gap between the groove and an adjacent groove.