Trench-Gate Semiconductor Device With Perpendicular Gate Channel
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Solution Overview
Problem
Conventional semiconductor devices with trench-gate structures face challenges in increasing gate channel width without proportionally increasing device size, which limits their ability to handle high currents and reduce on-resistance effectively.
Innovation Solution
The semiconductor device incorporates a substrate with trench-gate structures having an extending direction perpendicular to the drain doped region, along with source doped regions that adjoin the sidewalls of the trench-gate structures, allowing for a double depth gate channel width without increasing the device area, achieved by forming trench-gate structures with a dielectric layer and gate-electrode layer, and optimizing the depth and shape of source and drain doped regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gate channel width is increased to handle higher currents and reduce on-resistance, then the driving current capability is improved, but the device size increases proportionally
Solution Approach 1:
The patent transitions from a planar gate channel configuration to a three-dimensional trench-gate structure. The gate electrode extends vertically into the substrate along the trench sidewalls, creating a gate channel that utilizes the vertical dimension. This allows the gate channel width to be defined by the trench depth rather than the horizontal trench length, enabling increased driving current capability without proportional increases in device footprint.
Solution Approach 2:
The gate electrode is nested within the trench structure, with the gate channel formed between the trench sidewalls. The source and drain regions are positioned to adjoin the trench-gate structure, creating a compact nested arrangement where the active channel region is contained within the three-dimensional trench geometry rather than requiring additional lateral space.
2Productivity
If the trench-gate structure depth is increased to increase gate channel width, then the driving current capability is improved, but the manufacturing complexity increases
Solution Approach 1:
The gate electrode is segmented into multiple sections along the trench length, with field-plate regions positioned at the ends of the trench-gate structure. These field-plate regions extend the electric field control without requiring increased trench depth. The segmentation allows optimization of the active gate channel region while managing the overall structure complexity through functional zones.
Solution Approach 2:
The patent optimizes the trench depth and gate electrode dimensions as key parameters to achieve the desired gate channel width. By carefully controlling the trench depth, gate electrode thickness, and source/drain region depths, the design achieves high driving current capability while maintaining manufacturability through standardized process parameters rather than excessive structural complexity.
Data Source
AI summary
A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a second side opposite to the first side of the trench-gate structure. The source doped region adjoins the sidewall of the trench-gate structure. A drain doped region is in the substrate corresponding to the active region. The field-plate region is between the drain doped region and the trench-gate structure. An extending direction of length of the trench-gate structure is perpendicular to that of the drain doped region as viewed from a top-view perspective.