Trench Gate Semiconductor Device Thermal Management via Gate Contact
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Solution Overview
Problem
Semiconductor devices with trench gate structures face challenges in managing temperature rise, leading to reliability issues and increased resistance due to complex structures and inefficient heat dissipation.
Innovation Solution
A semiconductor device design featuring a gate contact that passes through the upper electrode and intermediate insulating film to reach the lower electrode, facilitating direct electrical connection and acting as a heat dissipation material to manage temperature and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench gate structure is used, then device performance is improved, but temperature rise occurs leading to reliability issues
Solution Approach 1:
The patent introduces a heat dissipation layer as an intermediary component between the gate electrode and the substrate. This layer specifically addresses the temperature rise problem in the trench gate structure by providing a dedicated thermal management pathway, allowing heat to be conducted away from the gate electrode without affecting the electrical performance of the device.
Solution Approach 2:
The patent modifies the thermal parameters of the gate structure by introducing materials with specific thermal conductivity properties. The heat dissipation layer is designed with controlled thickness and material composition to optimize thermal conductivity, thereby changing the thermal parameters of the overall gate structure to reduce temperature rise while maintaining electrical characteristics.
2Temperature
If complex structure is used to manage heat, then temperature control improves, but device complexity increases
Solution Approach 1:
The patent segments the gate structure into distinct functional layers: the gate electrode, the heat dissipation layer, and the substrate. This segmentation allows each layer to be optimized for its specific function - the gate electrode for electrical control and the heat dissipation layer for thermal management - without increasing overall device complexity. The layered approach provides simple yet effective heat management.
3Reliability
If complex wiring structure is used, then electrical connection is improved, but resistance increases
Solution Approach 1:
The patent merges the heat dissipation function with the electrical connection structure by making the heat dissipation layer contiguous with the gate electrode. This integration allows the same structural element to serve dual purposes: providing electrical connectivity while simultaneously conducting heat away from the gate electrode, thereby reducing resistance losses without requiring separate complex wiring structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively restrains temperature rise in the trench gate structure, enhances reliability, and lowers resistance by utilizing the gate contact as a heat dissipation material, while simplifying the device structure and reducing wiring length.
Implementation Method 1
a gate contact that is formed in the gate trench so as to pass through the upper electrode and through the intermediate insulating film and so as to reach the lower electrode and that electrically connects the lower electrode and the upper electrode together
Data Source
AI summary
A semiconductor device of the present invention includes a semiconductor layer in which a gate trench is formed, a gate insulating film formed along an inner surface of the gate trench, a gate electrode that is buried in the gate trench through the gate insulating film and that has a lower electrode and an upper electrode that are separated upwardly and downwardly from each other with an intermediate insulating film between the lower electrode and the upper electrode, and a gate contact that is formed in the gate trench so as to pass through the upper electrode and through the intermediate insulating film and so as to reach the lower electrode and that electrically connects the lower electrode and the upper electrode together.